Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition

X. Y. Chen, Yongfeng Lu, Y. H. Wu, B. J. Cho, B. J. Yang, T. Y.F. Liew

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The effects of laser annealing on the structures and properties of silicon nanocrystal films fabricated by pulsed laser deposition in inert argon gas were studied. The properties of the as-deposited large particles with size ranging from ∼100 nm to several μm on a uniform background films were analyzed. It was found that the strong photoluminescence (PL) was from the background film instead of the crystalline droplets. The consistency of the PL and crystal size from the background film was also found to support the quantum confinement effect theory. Nanoparticles with sizes ranging from 10-50 nm were found to be formed in the as deposited films after KrF excimer laser annealing.

Original languageEnglish (US)
Pages (from-to)1731-1737
Number of pages7
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - Jul 1 2004

Fingerprint

laser annealing
Pulsed laser deposition
Nanocrystals
pulsed laser deposition
nanocrystals
Annealing
Silicon
Lasers
silicon
Photoluminescence
photoluminescence
Quantum confinement
Excimer lasers
excimer lasers
Argon
argon
Nanoparticles
Crystalline materials
nanoparticles
Crystals

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Laser annealing of silicon nanocrystal films prepared by pulsed-laser deposition. / Chen, X. Y.; Lu, Yongfeng; Wu, Y. H.; Cho, B. J.; Yang, B. J.; Liew, T. Y.F.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 4, 01.07.2004, p. 1731-1737.

Research output: Contribution to journalArticle

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