Large-Area 2D/3D MoS2–MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors

Dawei Li, Zhiyong Xiao, Hossein Rabiee Golgir, Lijia Jiang, Vijay Raj Singh, Kamran Keramatnejad, Kevin E. Smith, Xia Hong, Lan Jiang, Jean Francois Silvain, Yongfeng Lu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

To date, scale-up fabrication of transition metal dichalcogenide (TMD-) based 2D/2D or 2D/3D heterostructures with specific functionalities is still a great challenge. This study, for the first time, reports on the controllable synthesis of large-area and continuous 2D/3D semiconductor/metal heterostructures consisting of monolayer MoS2 and bulk MoO2 with unique electrical and optical properties via one-step, vapor-transport-assisted rapid thermal processing. The temperature-dependent electrical transport measurements reveal that the 2D/3D MoS2–MoO2 heterostructure grown on SiO2/Si substrates exhibits metallic phase, while this heterostructure becomes a low-resistance semiconductor when it is grown on fused silica, which is attributed to the different degrees of sulfurization on different substrates, as being confirmed by surface potential analyses. Photoluminescence measurements taken on the MoS2–MoO2 heterostructures reveal the simultaneous presence of both negative trions and neutral excitons, while only neutral excitons are observed in the monolayer MoS2. The trion-binding energy is determined to be ≈27 meV, and the trion signal persists up to 330 K, indicating significant stability at room temperature. This work not only provides a new platform for understanding the intriguing physics in TMD-based heterostructures but also enables the design of more complicated devices with potential applications in nanoelectronics and nanophotonics.

Original languageEnglish (US)
Article number1600335
JournalAdvanced Electronic Materials
Volume3
Issue number7
DOIs
StatePublished - Jul 1 2017

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Excitons
Heterojunctions
Transition metals
Monolayers
Semiconductor materials
Rapid thermal processing
Nanophotonics
Nanoelectronics
Surface potential
Substrates
Fused silica
Binding energy
LDS 751
Photoluminescence
Electric properties
Physics
Optical properties
Metals
Vapors
Fabrication

Keywords

  • electrical transport
  • optical transitions
  • rapid thermal processing
  • semiconductor/metal heterostructures
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Large-Area 2D/3D MoS2–MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. / Li, Dawei; Xiao, Zhiyong; Golgir, Hossein Rabiee; Jiang, Lijia; Singh, Vijay Raj; Keramatnejad, Kamran; Smith, Kevin E.; Hong, Xia; Jiang, Lan; Silvain, Jean Francois; Lu, Yongfeng.

In: Advanced Electronic Materials, Vol. 3, No. 7, 1600335, 01.07.2017.

Research output: Contribution to journalArticle

Li, D, Xiao, Z, Golgir, HR, Jiang, L, Singh, VR, Keramatnejad, K, Smith, KE, Hong, X, Jiang, L, Silvain, JF & Lu, Y 2017, 'Large-Area 2D/3D MoS2–MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors', Advanced Electronic Materials, vol. 3, no. 7, 1600335. https://doi.org/10.1002/aelm.201600335
Li, Dawei ; Xiao, Zhiyong ; Golgir, Hossein Rabiee ; Jiang, Lijia ; Singh, Vijay Raj ; Keramatnejad, Kamran ; Smith, Kevin E. ; Hong, Xia ; Jiang, Lan ; Silvain, Jean Francois ; Lu, Yongfeng. / Large-Area 2D/3D MoS2–MoO2 Heterostructures with Thermally Stable Exciton and Intriguing Electrical Transport Behaviors. In: Advanced Electronic Materials. 2017 ; Vol. 3, No. 7.
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