Abstract
High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or "SIMOX," with top layer thicknesses as small as 220 Å. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 733-735 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 76 |
| Issue number | 6 |
| DOIs | |
| State | Published - Feb 7 2000 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen. / Noh, M.; Jellison, G. E.; Namavar, F.; Weitering, H. H.
In: Applied Physics Letters, Vol. 76, No. 6, 07.02.2000, p. 733-735.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen
AU - Noh, M.
AU - Jellison, G. E.
AU - Namavar, F.
AU - Weitering, H. H.
PY - 2000/2/7
Y1 - 2000/2/7
N2 - High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or "SIMOX," with top layer thicknesses as small as 220 Å. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.
AB - High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or "SIMOX," with top layer thicknesses as small as 220 Å. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.
UR - http://www.scopus.com/inward/record.url?scp=0000990012&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000990012&partnerID=8YFLogxK
U2 - 10.1063/1.125877
DO - 10.1063/1.125877
M3 - Article
AN - SCOPUS:0000990012
VL - 76
SP - 733
EP - 735
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
ER -