Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen

M. Noh, G. E. Jellison, F. Namavar, H. H. Weitering

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or "SIMOX," with top layer thicknesses as small as 220 Å. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.

Original languageEnglish (US)
Pages (from-to)733-735
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number6
DOIs
StatePublished - Feb 7 2000

Fingerprint

isolation
oxygen
conduction
scanning tunneling microscopy
implantation
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen. / Noh, M.; Jellison, G. E.; Namavar, F.; Weitering, H. H.

In: Applied Physics Letters, Vol. 76, No. 6, 07.02.2000, p. 733-735.

Research output: Contribution to journalArticle

Noh, M. ; Jellison, G. E. ; Namavar, F. ; Weitering, H. H. / Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen. In: Applied Physics Letters. 2000 ; Vol. 76, No. 6. pp. 733-735.
@article{379bccf3578b4314badc7c8ca7098f9d,
title = "Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen",
abstract = "High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or {"}SIMOX,{"} with top layer thicknesses as small as 220 {\AA}. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.",
author = "M. Noh and Jellison, {G. E.} and F. Namavar and Weitering, {H. H.}",
year = "2000",
month = "2",
day = "7",
doi = "10.1063/1.125877",
language = "English (US)",
volume = "76",
pages = "733--735",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Isolation of a metallic Si(111)7X7 surface reconstruction via separation by implanted oxygen

AU - Noh, M.

AU - Jellison, G. E.

AU - Namavar, F.

AU - Weitering, H. H.

PY - 2000/2/7

Y1 - 2000/2/7

N2 - High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or "SIMOX," with top layer thicknesses as small as 220 Å. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.

AB - High-quality Si(111)7X7 surface reconstructions have been observed on (111)-oriented Si/SiO2/Si substrates, prepared via separation by implantation of oxygen, or "SIMOX," with top layer thicknesses as small as 220 Å. Scanning tunneling microscopy and spectroscopy data indicate that the electrically and physically isolated top layer is electrically conducting, in contrast to that of (100) SIMOX material, which accumulates charge under typical imaging conditions. We speculate that the 7X7 reconstruction on (111) SIMOX material is an efficient conduction channel, allowing atomic resolution imaging of the isolated Si top layer.

UR - http://www.scopus.com/inward/record.url?scp=0000990012&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000990012&partnerID=8YFLogxK

U2 - 10.1063/1.125877

DO - 10.1063/1.125877

M3 - Article

AN - SCOPUS:0000990012

VL - 76

SP - 733

EP - 735

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

ER -