Irradiation effects on microstructure change in nanocrystalline ceria - Phase, lattice stress, grain size and boundaries

P. D. Edmondson, Y. Zhang, S. Moll, Fereydoon Namavar, W. J. Weber

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

With a wide variety of applications in numerous industries, ranging from biomedical to nuclear, ceramics such as ceria are key engineering materials. It is possible to significantly alter the materials functionality and therefore its applications by reducing the grain size to the nanometer size regime, at which point the unique varieties of grain boundaries and associated interfaces begin to dominate the material properties. Nanocrystalline films of cubic ceria deposited onto Si substrates have been irradiated with 3 MeV Au+ ions at temperatures of 300 and 400 K to evaluate their response to irradiation. It was observed that the films remained phase stable. Following a slight stress relief stage at low damage levels, the overall lattice is extremely stable up to high irradiation dose of ∼34 displacements per atom. The grains were also observed to undergo a temperature-dependent grain growth process upon ion irradiation. This is attributed to a defect-driven mechanism in which the diffusion of defects from the collision cascade is critical. Formation of dislocations that terminate and stabilize at symmetric grain boundaries may be the limiting factor in the grain growth and overall energy reduction of the system. Utilizing ion modification, possible improvement of the adhesion of thin films and reduction of the probability of detrimental effects of stress-induced problems are discussed.

Original languageEnglish (US)
Pages (from-to)5408-5416
Number of pages9
JournalActa Materialia
Volume60
Issue number15
DOIs
StatePublished - Jan 1 2012

Fingerprint

Cerium compounds
Grain growth
Grain boundaries
Irradiation
Ions
Stress relief
Defects
Microstructure
Ion bombardment
Dislocations (crystals)
Dosimetry
Materials properties
Adhesion
Thin films
Atoms
Temperature
Substrates
Industry

Keywords

  • Dislocations
  • Ion irradiation
  • Lattice effects
  • Nanocrystalline ceria

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Cite this

Irradiation effects on microstructure change in nanocrystalline ceria - Phase, lattice stress, grain size and boundaries. / Edmondson, P. D.; Zhang, Y.; Moll, S.; Namavar, Fereydoon; Weber, W. J.

In: Acta Materialia, Vol. 60, No. 15, 01.01.2012, p. 5408-5416.

Research output: Contribution to journalArticle

Edmondson, P. D. ; Zhang, Y. ; Moll, S. ; Namavar, Fereydoon ; Weber, W. J. / Irradiation effects on microstructure change in nanocrystalline ceria - Phase, lattice stress, grain size and boundaries. In: Acta Materialia. 2012 ; Vol. 60, No. 15. pp. 5408-5416.
@article{d0edbad03f6a40fbb3d189a87e3ad650,
title = "Irradiation effects on microstructure change in nanocrystalline ceria - Phase, lattice stress, grain size and boundaries",
abstract = "With a wide variety of applications in numerous industries, ranging from biomedical to nuclear, ceramics such as ceria are key engineering materials. It is possible to significantly alter the materials functionality and therefore its applications by reducing the grain size to the nanometer size regime, at which point the unique varieties of grain boundaries and associated interfaces begin to dominate the material properties. Nanocrystalline films of cubic ceria deposited onto Si substrates have been irradiated with 3 MeV Au+ ions at temperatures of 300 and 400 K to evaluate their response to irradiation. It was observed that the films remained phase stable. Following a slight stress relief stage at low damage levels, the overall lattice is extremely stable up to high irradiation dose of ∼34 displacements per atom. The grains were also observed to undergo a temperature-dependent grain growth process upon ion irradiation. This is attributed to a defect-driven mechanism in which the diffusion of defects from the collision cascade is critical. Formation of dislocations that terminate and stabilize at symmetric grain boundaries may be the limiting factor in the grain growth and overall energy reduction of the system. Utilizing ion modification, possible improvement of the adhesion of thin films and reduction of the probability of detrimental effects of stress-induced problems are discussed.",
keywords = "Dislocations, Ion irradiation, Lattice effects, Nanocrystalline ceria",
author = "Edmondson, {P. D.} and Y. Zhang and S. Moll and Fereydoon Namavar and Weber, {W. J.}",
year = "2012",
month = "1",
day = "1",
doi = "10.1016/j.actamat.2012.07.010",
language = "English (US)",
volume = "60",
pages = "5408--5416",
journal = "Acta Materialia",
issn = "1359-6454",
publisher = "Elsevier Limited",
number = "15",

}

TY - JOUR

T1 - Irradiation effects on microstructure change in nanocrystalline ceria - Phase, lattice stress, grain size and boundaries

AU - Edmondson, P. D.

AU - Zhang, Y.

AU - Moll, S.

AU - Namavar, Fereydoon

AU - Weber, W. J.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - With a wide variety of applications in numerous industries, ranging from biomedical to nuclear, ceramics such as ceria are key engineering materials. It is possible to significantly alter the materials functionality and therefore its applications by reducing the grain size to the nanometer size regime, at which point the unique varieties of grain boundaries and associated interfaces begin to dominate the material properties. Nanocrystalline films of cubic ceria deposited onto Si substrates have been irradiated with 3 MeV Au+ ions at temperatures of 300 and 400 K to evaluate their response to irradiation. It was observed that the films remained phase stable. Following a slight stress relief stage at low damage levels, the overall lattice is extremely stable up to high irradiation dose of ∼34 displacements per atom. The grains were also observed to undergo a temperature-dependent grain growth process upon ion irradiation. This is attributed to a defect-driven mechanism in which the diffusion of defects from the collision cascade is critical. Formation of dislocations that terminate and stabilize at symmetric grain boundaries may be the limiting factor in the grain growth and overall energy reduction of the system. Utilizing ion modification, possible improvement of the adhesion of thin films and reduction of the probability of detrimental effects of stress-induced problems are discussed.

AB - With a wide variety of applications in numerous industries, ranging from biomedical to nuclear, ceramics such as ceria are key engineering materials. It is possible to significantly alter the materials functionality and therefore its applications by reducing the grain size to the nanometer size regime, at which point the unique varieties of grain boundaries and associated interfaces begin to dominate the material properties. Nanocrystalline films of cubic ceria deposited onto Si substrates have been irradiated with 3 MeV Au+ ions at temperatures of 300 and 400 K to evaluate their response to irradiation. It was observed that the films remained phase stable. Following a slight stress relief stage at low damage levels, the overall lattice is extremely stable up to high irradiation dose of ∼34 displacements per atom. The grains were also observed to undergo a temperature-dependent grain growth process upon ion irradiation. This is attributed to a defect-driven mechanism in which the diffusion of defects from the collision cascade is critical. Formation of dislocations that terminate and stabilize at symmetric grain boundaries may be the limiting factor in the grain growth and overall energy reduction of the system. Utilizing ion modification, possible improvement of the adhesion of thin films and reduction of the probability of detrimental effects of stress-induced problems are discussed.

KW - Dislocations

KW - Ion irradiation

KW - Lattice effects

KW - Nanocrystalline ceria

UR - http://www.scopus.com/inward/record.url?scp=84864813061&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864813061&partnerID=8YFLogxK

U2 - 10.1016/j.actamat.2012.07.010

DO - 10.1016/j.actamat.2012.07.010

M3 - Article

VL - 60

SP - 5408

EP - 5416

JO - Acta Materialia

JF - Acta Materialia

SN - 1359-6454

IS - 15

ER -