IR-VUV dielectric function of Al1-xInxN determined by spectroscopic ellipsometry

A. Kasic, Mathias Schubert, B. Rheinländer, J. Off, F. Scholz, C. M. Herzinger

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Spectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm-1... 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1-xInxN films for 0.11 ≤x ≤ 0.21. The AlInN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1-xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1-xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For high-quality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume639
StatePublished - Dec 1 2001
EventGaN and Related Alloys 2000 - Boston, MA, United States
Duration: Nov 27 2000Dec 1 2000

Fingerprint

Spectroscopic ellipsometry
ellipsometry
Vacuum
Infrared radiation
Metallorganic vapor phase epitaxy
Aluminum Oxide
Film growth
Buffer layers
Sapphire
Optical properties
vacuum
plane strain
Substrates
sapphire
buffers
optical properties
predictions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

IR-VUV dielectric function of Al1-xInxN determined by spectroscopic ellipsometry. / Kasic, A.; Schubert, Mathias; Rheinländer, B.; Off, J.; Scholz, F.; Herzinger, C. M.

In: Materials Research Society Symposium - Proceedings, Vol. 639, 01.12.2001.

Research output: Contribution to journalConference article

@article{6387a6e976cf4f45a5237ff5e882a966,
title = "IR-VUV dielectric function of Al1-xInxN determined by spectroscopic ellipsometry",
abstract = "Spectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm-1... 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1-xInxN films for 0.11 ≤x ≤ 0.21. The AlInN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1-xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1-xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For high-quality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.",
author = "A. Kasic and Mathias Schubert and B. Rheinl{\"a}nder and J. Off and F. Scholz and Herzinger, {C. M.}",
year = "2001",
month = "12",
day = "1",
language = "English (US)",
volume = "639",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - IR-VUV dielectric function of Al1-xInxN determined by spectroscopic ellipsometry

AU - Kasic, A.

AU - Schubert, Mathias

AU - Rheinländer, B.

AU - Off, J.

AU - Scholz, F.

AU - Herzinger, C. M.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Spectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm-1... 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1-xInxN films for 0.11 ≤x ≤ 0.21. The AlInN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1-xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1-xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For high-quality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.

AB - Spectroscopic Ellipsometry from the mid-infrared (mid-ir) to the vacuum-ultraviolet (vuv) spectral range (350 cm-1... 8.8 eV) is used to study the optical properties of hexagonal MOVPE-grown Al1-xInxN films for 0.11 ≤x ≤ 0.21. The AlInN E1(TO) phonon shows a one-mode behavior in contrast to recent theoretical predictions [H. Grille, Ch. Schnittler, and F. Bechstedt, Phys. Rev. B 61, 6091 (2000)]. Approximately 120 nm thick Al1-xInxN films grown on slightly compressively strained hexagonal GaN buffer layers reveal the influence of in-plane strain on the E1(TO) phonon mode frequencies. Al1-xInxN deposited directly on [0001] sapphire substrate possesses E1(TO) mode frequency which indicate fully relaxed film growth. For high-quality Al0.890In0.110N one A1(LO) phonon mode was observed. Furthermore, we present the complex dielectric function of hexagonal Al0.872In0.128N from the mid-ir to vuv spectral range.

UR - http://www.scopus.com/inward/record.url?scp=0035558827&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035558827&partnerID=8YFLogxK

M3 - Conference article

VL - 639

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -