Ion-channeling study of the SiC/Si/SiO2/Si interface

W. Jiang, S. Thevuthasan, W. J. Weber, F. Namavar

Research output: Contribution to journalArticle

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Abstract

Ion channeling has been used in a detailed study of 3C-SiC films grown by chemical vapor deposition on a Si/SiO2/Si substrate. For a 160-nm-thick (100)-oriented SiC film, the results show a minimum yield (χmin) of ∼28% at the SiC-Si interface, while a SiC film with a thickness of ∼2.4 μm, grown under identical conditions, was almost defect free (χmin=5.3%) in the surface region. Angular scans around the 〈110〉 axis revealed the existence of a superlattice structure at the SiC-Si interface. The strain-induced angular shift was determined to be 0.16°±0.05°, indicating a kink between the SiC and Si layers along the inclined 〈110〉 axis. A modified model is suggested to interpret the experimental observations.

Original languageEnglish (US)
Pages (from-to)3501-3503
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number23
DOIs
StatePublished - Jun 7 1999

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vapor deposition
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defects

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  • Physics and Astronomy (miscellaneous)

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Jiang, W., Thevuthasan, S., Weber, W. J., & Namavar, F. (1999). Ion-channeling study of the SiC/Si/SiO2/Si interface. Applied Physics Letters, 74(23), 3501-3503. https://doi.org/10.1063/1.124143

Ion-channeling study of the SiC/Si/SiO2/Si interface. / Jiang, W.; Thevuthasan, S.; Weber, W. J.; Namavar, F.

In: Applied Physics Letters, Vol. 74, No. 23, 07.06.1999, p. 3501-3503.

Research output: Contribution to journalArticle

Jiang, W, Thevuthasan, S, Weber, WJ & Namavar, F 1999, 'Ion-channeling study of the SiC/Si/SiO2/Si interface', Applied Physics Letters, vol. 74, no. 23, pp. 3501-3503. https://doi.org/10.1063/1.124143
Jiang W, Thevuthasan S, Weber WJ, Namavar F. Ion-channeling study of the SiC/Si/SiO2/Si interface. Applied Physics Letters. 1999 Jun 7;74(23):3501-3503. https://doi.org/10.1063/1.124143
Jiang, W. ; Thevuthasan, S. ; Weber, W. J. ; Namavar, F. / Ion-channeling study of the SiC/Si/SiO2/Si interface. In: Applied Physics Letters. 1999 ; Vol. 74, No. 23. pp. 3501-3503.
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