Investigation on laser-induced effects in nanostructure fabrication with laser-irradiated scanning tunneling microscope tips in air ambient

Z. H. Mai, Yongfeng Lu, W. D. Song, W. K. Chim

Research output: Contribution to journalConference article

Abstract

In this paper, we report our investigation on the kinetics of nanostructure fabrication on gold films and on H-passivated Ge surfaces. The relationship between the current and the tip-sample distance of the STM junction was measured for both gold films and H-passivated Ge surfaces. The tip-sample distance for gold films under a electrochemically etched W tip is approximately 2 nm, while that for H-passivated Ge sufaces is more than 27 nm. The thermal expansion length of the tip under laser irradiation was calculated. From the comparison of the thermal expansion length and the tip-sample distance, we can reach the conclusion that for gold films, thermal mechanical indention is the primary reason of nanostructure formation, while for H-passivated Ge surfaces, optical enhancement is the only reason.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume617
StatePublished - Dec 1 2000
EventLaser-Solid Interactions for Materials Processing - San Francisco, CA, United States
Duration: Apr 25 2000Apr 27 2000

Fingerprint

nanofabrication
Gold
Nanostructures
Microscopes
microscopes
Scanning
Fabrication
scanning
Lasers
air
gold
Air
lasers
Thermal expansion
thermal expansion
Laser beam effects
Kinetics
irradiation
augmentation
kinetics

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "In this paper, we report our investigation on the kinetics of nanostructure fabrication on gold films and on H-passivated Ge surfaces. The relationship between the current and the tip-sample distance of the STM junction was measured for both gold films and H-passivated Ge surfaces. The tip-sample distance for gold films under a electrochemically etched W tip is approximately 2 nm, while that for H-passivated Ge sufaces is more than 27 nm. The thermal expansion length of the tip under laser irradiation was calculated. From the comparison of the thermal expansion length and the tip-sample distance, we can reach the conclusion that for gold films, thermal mechanical indention is the primary reason of nanostructure formation, while for H-passivated Ge surfaces, optical enhancement is the only reason.",
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AU - Mai, Z. H.

AU - Lu, Yongfeng

AU - Song, W. D.

AU - Chim, W. K.

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N2 - In this paper, we report our investigation on the kinetics of nanostructure fabrication on gold films and on H-passivated Ge surfaces. The relationship between the current and the tip-sample distance of the STM junction was measured for both gold films and H-passivated Ge surfaces. The tip-sample distance for gold films under a electrochemically etched W tip is approximately 2 nm, while that for H-passivated Ge sufaces is more than 27 nm. The thermal expansion length of the tip under laser irradiation was calculated. From the comparison of the thermal expansion length and the tip-sample distance, we can reach the conclusion that for gold films, thermal mechanical indention is the primary reason of nanostructure formation, while for H-passivated Ge surfaces, optical enhancement is the only reason.

AB - In this paper, we report our investigation on the kinetics of nanostructure fabrication on gold films and on H-passivated Ge surfaces. The relationship between the current and the tip-sample distance of the STM junction was measured for both gold films and H-passivated Ge surfaces. The tip-sample distance for gold films under a electrochemically etched W tip is approximately 2 nm, while that for H-passivated Ge sufaces is more than 27 nm. The thermal expansion length of the tip under laser irradiation was calculated. From the comparison of the thermal expansion length and the tip-sample distance, we can reach the conclusion that for gold films, thermal mechanical indention is the primary reason of nanostructure formation, while for H-passivated Ge surfaces, optical enhancement is the only reason.

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VL - 617

JO - Materials Research Society Symposium - Proceedings

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