Investigation of the free charge carrier properties at the ZnO-sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry

C. Sturm, T. Chavdarov, R. Schmidt-Grund, B. Rheinländer, C. Bundesmann, H. Hochmuth, M. Lorenz, M. Schubert, M. Grundmann

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

The free charge carrier properties at the film-substrate interface of non-polar ZnO films were investigated by generalized infrared spectroscopic ellipsometry in dependence on film thickness and annealing time. For all samples a highly-conductive film-substrate interface layer was found. It was observed that the charge density at the interface increases with increasing film thickness and decreases with increasing annealing time. Possible explanations could be the diffusion of Al from the substrate into the ZnO film, the formation of zinc aluminate, or structural changes, respectively.

Original languageEnglish (US)
Pages (from-to)1350-1353
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number5
DOIs
StatePublished - Dec 1 2008
Event4th International Conference on Spectroscopic Ellipsometry, ICSE4 - Stockholm, Sweden
Duration: Jun 11 2007Jun 15 2007

Fingerprint

ellipsometry
charge carriers
sapphire
film thickness
annealing
zinc

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Investigation of the free charge carrier properties at the ZnO-sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry. / Sturm, C.; Chavdarov, T.; Schmidt-Grund, R.; Rheinländer, B.; Bundesmann, C.; Hochmuth, H.; Lorenz, M.; Schubert, M.; Grundmann, M.

In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 5, 01.12.2008, p. 1350-1353.

Research output: Contribution to journalConference article

Sturm, C. ; Chavdarov, T. ; Schmidt-Grund, R. ; Rheinländer, B. ; Bundesmann, C. ; Hochmuth, H. ; Lorenz, M. ; Schubert, M. ; Grundmann, M. / Investigation of the free charge carrier properties at the ZnO-sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry. In: Physica Status Solidi (C) Current Topics in Solid State Physics. 2008 ; Vol. 5, No. 5. pp. 1350-1353.
@article{6962b688ca7249ecb39b985ad37c9c0f,
title = "Investigation of the free charge carrier properties at the ZnO-sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry",
abstract = "The free charge carrier properties at the film-substrate interface of non-polar ZnO films were investigated by generalized infrared spectroscopic ellipsometry in dependence on film thickness and annealing time. For all samples a highly-conductive film-substrate interface layer was found. It was observed that the charge density at the interface increases with increasing film thickness and decreases with increasing annealing time. Possible explanations could be the diffusion of Al from the substrate into the ZnO film, the formation of zinc aluminate, or structural changes, respectively.",
author = "C. Sturm and T. Chavdarov and R. Schmidt-Grund and B. Rheinl{\"a}nder and C. Bundesmann and H. Hochmuth and M. Lorenz and M. Schubert and M. Grundmann",
year = "2008",
month = "12",
day = "1",
doi = "10.1002/pssc.200777853",
language = "English (US)",
volume = "5",
pages = "1350--1353",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "5",

}

TY - JOUR

T1 - Investigation of the free charge carrier properties at the ZnO-sapphire interface in a-plane ZnO films studied by generalized infrared ellipsometry

AU - Sturm, C.

AU - Chavdarov, T.

AU - Schmidt-Grund, R.

AU - Rheinländer, B.

AU - Bundesmann, C.

AU - Hochmuth, H.

AU - Lorenz, M.

AU - Schubert, M.

AU - Grundmann, M.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - The free charge carrier properties at the film-substrate interface of non-polar ZnO films were investigated by generalized infrared spectroscopic ellipsometry in dependence on film thickness and annealing time. For all samples a highly-conductive film-substrate interface layer was found. It was observed that the charge density at the interface increases with increasing film thickness and decreases with increasing annealing time. Possible explanations could be the diffusion of Al from the substrate into the ZnO film, the formation of zinc aluminate, or structural changes, respectively.

AB - The free charge carrier properties at the film-substrate interface of non-polar ZnO films were investigated by generalized infrared spectroscopic ellipsometry in dependence on film thickness and annealing time. For all samples a highly-conductive film-substrate interface layer was found. It was observed that the charge density at the interface increases with increasing film thickness and decreases with increasing annealing time. Possible explanations could be the diffusion of Al from the substrate into the ZnO film, the formation of zinc aluminate, or structural changes, respectively.

UR - http://www.scopus.com/inward/record.url?scp=71649093554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71649093554&partnerID=8YFLogxK

U2 - 10.1002/pssc.200777853

DO - 10.1002/pssc.200777853

M3 - Conference article

AN - SCOPUS:71649093554

VL - 5

SP - 1350

EP - 1353

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 5

ER -