Abstract
Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C 2H2F2), with trifluoroethylene, TrFE (C 2HF3), has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metal-ferroelectric- insulator-semiconductor bistable capacitor memory element consisting of an aluminum gate, a P(VDF-TrFE) Langmuir-Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a ±7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.
| Original language | English (US) |
|---|---|
| Article number | 024109 |
| Journal | Journal of Applied Physics |
| Volume | 108 |
| Issue number | 2 |
| DOIs | |
| State | Published - Jul 15 2010 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Investigation of state retention in metal-ferroelectric-insulator- semiconductor structures based on Langmuir-Blodgett copolymer films. / Reece, Tim J; Gerber, A.; Kohlstedt, H.; Ducharme, Stephen.
In: Journal of Applied Physics, Vol. 108, No. 2, 024109, 15.07.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Investigation of state retention in metal-ferroelectric-insulator- semiconductor structures based on Langmuir-Blodgett copolymer films
AU - Reece, Tim J
AU - Gerber, A.
AU - Kohlstedt, H.
AU - Ducharme, Stephen
PY - 2010/7/15
Y1 - 2010/7/15
N2 - Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C 2H2F2), with trifluoroethylene, TrFE (C 2HF3), has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metal-ferroelectric- insulator-semiconductor bistable capacitor memory element consisting of an aluminum gate, a P(VDF-TrFE) Langmuir-Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a ±7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.
AB - Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C 2H2F2), with trifluoroethylene, TrFE (C 2HF3), has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metal-ferroelectric- insulator-semiconductor bistable capacitor memory element consisting of an aluminum gate, a P(VDF-TrFE) Langmuir-Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a ±7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.
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U2 - 10.1063/1.3452331
DO - 10.1063/1.3452331
M3 - Article
VL - 108
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
M1 - 024109
ER -