Investigation of state retention in metal-ferroelectric-insulator- semiconductor structures based on Langmuir-Blodgett copolymer films

Tim J Reece, A. Gerber, H. Kohlstedt, Stephen Ducharme

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF (C 2H2F2), with trifluoroethylene, TrFE (C 2HF3), has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metal-ferroelectric- insulator-semiconductor bistable capacitor memory element consisting of an aluminum gate, a P(VDF-TrFE) Langmuir-Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a ±7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.

Original languageEnglish (US)
Article number024109
JournalJournal of Applied Physics
Volume108
Issue number2
DOIs
StatePublished - Jul 15 2010

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copolymers
insulators
metals
cerium oxides
organic semiconductors
vinylidene
Langmuir-Blodgett films
compatibility
fluorides
capacitors
buffers
hysteresis
wafers
permittivity
aluminum
oxides
silicon
polarization
thin films
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Investigation of state retention in metal-ferroelectric-insulator- semiconductor structures based on Langmuir-Blodgett copolymer films. / Reece, Tim J; Gerber, A.; Kohlstedt, H.; Ducharme, Stephen.

In: Journal of Applied Physics, Vol. 108, No. 2, 024109, 15.07.2010.

Research output: Contribution to journalArticle

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