Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds

P. Lukashev, P. Kharel, S. Gilbert, B. Staten, N. Hurley, R. Fuglsby, Y. Huh, S. Valloppilly, W. Zhang, K. Yang, R. Skomski, D. J. Sellmyer

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Abstract

The increasing interest in spin-based electronics has led to a vigorous search for new materials that can provide a high degree of spin polarization in electron transport. An ideal candidate would act as an insulator for one spin channel and a conductor or semiconductor for the opposite spin channel, corresponding to the respective cases of half-metallicity and spin-gapless semiconductivity. Our first-principle electronic-structure calculations indicate that the metallic Heusler compound Ti2MnAl becomes half-metallic and spin-gapless semiconducting if half of the Al atoms are replaced by Sn and In, respectively. These electronic structures are associated with structural transitions from the regular cubic Heusler structure to the inverted cubic Heusler structure.

Original languageEnglish (US)
Article number141901
JournalApplied Physics Letters
Volume108
Issue number14
DOIs
StatePublished - Apr 4 2016

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lukashev, P., Kharel, P., Gilbert, S., Staten, B., Hurley, N., Fuglsby, R., Huh, Y., Valloppilly, S., Zhang, W., Yang, K., Skomski, R., & Sellmyer, D. J. (2016). Investigation of spin-gapless semiconductivity and half-metallicity in Ti2MnAl-based compounds. Applied Physics Letters, 108(14), [141901]. https://doi.org/10.1063/1.4945600