Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy

H. Q. Ni, Y. F. Lu, Z. Y. Liu, H. Qiu, W. J. Wang, Z. M. Ren, S. K. Chow, Y. X. Jie

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We have grown Li-doped ZnO films on silicon (100) using the rf planar magnetron sputtering method. The surface charges induced piezoelectrically by defect and by polarization can be observed by electric force microscopy. The Li-doped ZnO films have been proven to be ferroelectric. The Raman spectra of ZnO and Li-doped ZnO films have been measured.

Original languageEnglish (US)
Pages (from-to)812-814
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number6
DOIs
StatePublished - Aug 6 2001
Externally publishedYes

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Raman spectroscopy
microscopy
spectroscopy
magnetron sputtering
Raman spectra
defects
silicon
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy. / Ni, H. Q.; Lu, Y. F.; Liu, Z. Y.; Qiu, H.; Wang, W. J.; Ren, Z. M.; Chow, S. K.; Jie, Y. X.

In: Applied Physics Letters, Vol. 79, No. 6, 06.08.2001, p. 812-814.

Research output: Contribution to journalArticle

Ni, H. Q. ; Lu, Y. F. ; Liu, Z. Y. ; Qiu, H. ; Wang, W. J. ; Ren, Z. M. ; Chow, S. K. ; Jie, Y. X. / Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy. In: Applied Physics Letters. 2001 ; Vol. 79, No. 6. pp. 812-814.
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