Investigation of ferroelectric polymer langmuir film properties

Tim J Reece, Wyatt A. Behn, Adrian Sanabria-Diaz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of Polyvinylidene Fluoride (PVDF) copolymers have been incorporated within ferroelectric field effect transistors, all organic thin film transistor devices (OTFTs), piezoelectric actuators, and recently proposed as the ferroelectric layer in a promising multiferroic tunnel junction configuration []]. The properties of most of these devices would benefit from reduced thickness and better thickness control of the ferroelectric layer during device processing. A proven means for fabricating ultrathin films of the PVDF copolymer is the Langmuir-Blodgett (LB) technique. This technique involves dissolving the polymer in a volatile solvent which is then dispersed dropwise onto a purified water subphase, leaving an ultrathin layer of the copolymer on the water surface. The ability to control the thickness on the molecular level is the most prominent feature of this technique. In some early studies [2], the minimum thickness of these films was found to be about 5 Angstroms, or roughly the same thickness as the intermolecular spacing of the all-trans p phase for the ferroelectric polymers. Later studies have led to the fabrication of films composed of thicker transfer steps: ~ 1.8 nm per deposition [3]. The discrepancy is likely explained by the nature of the VDF molecule: it is not an amphiphile. In this study, we further investigate the properties of Langmuir films of ferroelectric copolymers and discuss the observation of an apparent monolayer phase transition based on abrupt changes observed in the compressibility of the films. The main goal of this project is to discover the extent to which the device properties (like transfer step thickness) of PVDF films can be modified through processing conditions.

Original languageEnglish (US)
Title of host publicationMaterials for Beyond the Roadmap Devices in Logic, Power and Memory
EditorsPaul McIntyre, Hyunsang Hwang, John Robertson, Martin Frank
PublisherMaterials Research Society
Pages1-6
Number of pages6
ISBN (Electronic)9781510826441
DOIs
StatePublished - Jan 1 2015
Event2015 MRS Spring Meeting - San Francisco, United States
Duration: Apr 6 2015Apr 10 2015

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1790
ISSN (Print)0272-9172

Other

Other2015 MRS Spring Meeting
CountryUnited States
CitySan Francisco
Period4/6/154/10/15

Fingerprint

Langmuir Blodgett films
Polymer films
Ferroelectric materials
Copolymers
copolymers
polymers
vinylidene
fluorides
Polymers
Thickness control
Amphiphiles
Tunnel junctions
Water
Ultrathin films
Piezoelectric actuators
Thin film transistors
Processing
Field effect transistors
Compressibility
piezoelectric actuators

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Reece, T. J., Behn, W. A., & Sanabria-Diaz, A. (2015). Investigation of ferroelectric polymer langmuir film properties. In P. McIntyre, H. Hwang, J. Robertson, & M. Frank (Eds.), Materials for Beyond the Roadmap Devices in Logic, Power and Memory (pp. 1-6). (Materials Research Society Symposium Proceedings; Vol. 1790). Materials Research Society. https://doi.org/10.1SS7/opl.2015.457

Investigation of ferroelectric polymer langmuir film properties. / Reece, Tim J; Behn, Wyatt A.; Sanabria-Diaz, Adrian.

Materials for Beyond the Roadmap Devices in Logic, Power and Memory. ed. / Paul McIntyre; Hyunsang Hwang; John Robertson; Martin Frank. Materials Research Society, 2015. p. 1-6 (Materials Research Society Symposium Proceedings; Vol. 1790).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Reece, TJ, Behn, WA & Sanabria-Diaz, A 2015, Investigation of ferroelectric polymer langmuir film properties. in P McIntyre, H Hwang, J Robertson & M Frank (eds), Materials for Beyond the Roadmap Devices in Logic, Power and Memory. Materials Research Society Symposium Proceedings, vol. 1790, Materials Research Society, pp. 1-6, 2015 MRS Spring Meeting, San Francisco, United States, 4/6/15. https://doi.org/10.1SS7/opl.2015.457
Reece TJ, Behn WA, Sanabria-Diaz A. Investigation of ferroelectric polymer langmuir film properties. In McIntyre P, Hwang H, Robertson J, Frank M, editors, Materials for Beyond the Roadmap Devices in Logic, Power and Memory. Materials Research Society. 2015. p. 1-6. (Materials Research Society Symposium Proceedings). https://doi.org/10.1SS7/opl.2015.457
Reece, Tim J ; Behn, Wyatt A. ; Sanabria-Diaz, Adrian. / Investigation of ferroelectric polymer langmuir film properties. Materials for Beyond the Roadmap Devices in Logic, Power and Memory. editor / Paul McIntyre ; Hyunsang Hwang ; John Robertson ; Martin Frank. Materials Research Society, 2015. pp. 1-6 (Materials Research Society Symposium Proceedings).
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