Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing

Alexey Lipatov, Alexey Varezhnikov, Martin Augustin, Michael Bruns, Martin Sommer, Victor Sysoev, Andrei Kolmakov, Alexander Sinitskii

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Arrays of nearly identical graphene devices on Si/SiO2 exhibit a substantial device-to-device variation, even in case of a high-quality chemical vapor deposition (CVD) or mechanically exfoliated graphene. We propose that such device-to-device variation could provide a platform for highly selective multisensor electronic olfactory systems. We fabricated a multielectrode array of CVD graphene devices on a Si/SiO2 substrate and demonstrated that the diversity of these devices is sufficient to reliably discriminate different short-chain alcohols: methanol, ethanol, and isopropanol. The diversity of graphene devices on Si/SiO2 could possibly be used to construct similar multisensor systems trained to recognize other analytes as well.

Original languageEnglish (US)
Article number013114
JournalApplied Physics Letters
Volume104
Issue number1
DOIs
StatePublished - Jan 6 2014

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graphene
field effect transistors
platforms
gases
vapor deposition
alcohols
ethyl alcohol
methyl alcohol
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing. / Lipatov, Alexey; Varezhnikov, Alexey; Augustin, Martin; Bruns, Michael; Sommer, Martin; Sysoev, Victor; Kolmakov, Andrei; Sinitskii, Alexander.

In: Applied Physics Letters, Vol. 104, No. 1, 013114, 06.01.2014.

Research output: Contribution to journalArticle

Lipatov, Alexey ; Varezhnikov, Alexey ; Augustin, Martin ; Bruns, Michael ; Sommer, Martin ; Sysoev, Victor ; Kolmakov, Andrei ; Sinitskii, Alexander. / Intrinsic device-to-device variation in graphene field-effect transistors on a Si/SiO2 substrate as a platform for discriminative gas sensing. In: Applied Physics Letters. 2014 ; Vol. 104, No. 1.
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