Interfacial Electrical Properties of Ion-Beam Sputter Deposited Amorphous Carbon on Silicon

A. Azim Khan, J. A. Woollam, Y. Chung, B. Banks

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Abstract

Amorphous, “diamond-like” Carbon films have been deposited on Si substrates, using ion-beam sputtering. The interfacial properties are studied using capacitance and conductance measurements. Data are analyzed using existing theories for interfacial electrical properties. The density of electronic states at the interface, along with corresponding time constants are determined, and the density of interface states is unusually low for an as yet unoptimized.

Original languageEnglish (US)
Pages (from-to)146-149
Number of pages4
JournalIEEE Electron Device Letters
Volume4
Issue number5
DOIs
Publication statusPublished - May 1983

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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