Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal-insulator-semiconductor structures

A. Azim Khan, John A. Woollam, Y. Chung

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

ac conductance and capacitance measurements over the range 10 Hz to 10 MHz for amorphous carbon on silicon metal-insulator-semiconductor structures are reported. Data can be interpreted as being due to tunneling of electrons into gap states located in the dielectric. Interface state densities as low as 1.3×1010 eV cm2 are found.

Original languageEnglish (US)
Pages (from-to)4299-4303
Number of pages5
JournalJournal of Applied Physics
Volume55
Issue number12
DOIs
StatePublished - Dec 1 1984

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MIS (semiconductors)
capacitance
insulators
carbon
silicon
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Interfacial effects due to tunneling to insulator gap states in amorphous carbon on silicon metal-insulator-semiconductor structures. / Khan, A. Azim; Woollam, John A.; Chung, Y.

In: Journal of Applied Physics, Vol. 55, No. 12, 01.12.1984, p. 4299-4303.

Research output: Contribution to journalArticle

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