Interband transitions in [001]-(GaP)1(InP)m superlattices

Mathias Schubert, H. Schmidt, J. Šik, T. Hofmann, V. Gottschalch, W. Grill, G. Böhm, G. Wagner

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We study the optical interband transitions of [001]-(GaP) 1(InP)m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E0, E00, E1, E 11, and E2 transitions from lineshape analysis of the pseudodielectric function 〈ε〉. The E0 and E00 interband transitions depend on m due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with m=1,⋯,14 confirm the observed dependence of the E0 transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively.

Original languageEnglish (US)
Pages (from-to)125-128
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume88
Issue number2-3
DOIs
StatePublished - Jan 16 2002

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Superlattices
superlattices
Monolayers
Vapor phase epitaxy
Optical transitions
Spectroscopic ellipsometry
Alloying
Photons
Metals
optical transition
vapor phase epitaxy
pseudopotentials
alloying
ellipsometry
Electrons
alignment
photons
symmetry
metals
electrons

Keywords

  • Band structure
  • Ellipsometry
  • GaP-InP-superlattice
  • Ordering

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Interband transitions in [001]-(GaP)1(InP)m superlattices. / Schubert, Mathias; Schmidt, H.; Šik, J.; Hofmann, T.; Gottschalch, V.; Grill, W.; Böhm, G.; Wagner, G.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 88, No. 2-3, 16.01.2002, p. 125-128.

Research output: Contribution to journalArticle

Schubert, Mathias ; Schmidt, H. ; Šik, J. ; Hofmann, T. ; Gottschalch, V. ; Grill, W. ; Böhm, G. ; Wagner, G. / Interband transitions in [001]-(GaP)1(InP)m superlattices. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2002 ; Vol. 88, No. 2-3. pp. 125-128.
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AU - Šik, J.

AU - Hofmann, T.

AU - Gottschalch, V.

AU - Grill, W.

AU - Böhm, G.

AU - Wagner, G.

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AB - We study the optical interband transitions of [001]-(GaP) 1(InP)m monolayer superlattices on (001) InP for m=5, 14, 27 and 51 using spectroscopic ellipsometry for photon energies from 1 to 6 eV. Samples were grown by metal-organic vapor phase epitaxy. We determine the InP-like E0, E0+Δ0, E1, E 1+Δ1, and E2 transitions from lineshape analysis of the pseudodielectric function 〈ε〉. The E0 and E0+Δ0 interband transitions depend on m due to effective alloying, strain, and symmetry reduction upon the superlattice period. Empirical pseudopotential calculations for superlattices with m=1,⋯,14 confirm the observed dependence of the E0 transition on the superlattice period. We further discuss our theoretical findings of type-II alignment for electrons and holes, which should be located within the GaP- and InP monolayers, respectively.

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KW - Ordering

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