Interband transitions and phonon modes in BxGa1−xAs (0 < x < 0.03) and GaNyAs1−y (0 < y < 0.037): A comparison

Gunnar Leibiger, Volker Gottschalch, Volker Riede, Mathias Schubert, James N. Hilfiker, Thomas E. Tiwald

Research output: Contribution to journalArticle

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Abstract

We report on the experimental observation of direct interband-critical-point transitions and phonon modes in BxGa1−xAs alloys (0 < x < 0.03) and their evolution with increasing boron concentration using spectroscopic ellipsometry and Raman scattering. Our results are compared to the corresponding values in the GaNyAs1−y (0 < y < 0.037) material system. For BxGa1−xAs, we obtain only a small bowing coefficient of the Eg(x) dependence in contrast to the giant redshift of the GaNyAs1−y band-gap energy with y. The higher lying interband-transition energies of BxGa1−xAs (E1, E1 + Δ1, E0′, E2, and E1′) are slightly redshifted with increasing boron concentration. A similar behavior is found for the critical points E0′, E2, and E1′ in GaNyAs1−y. In BxGa1−xAs, we observe, as in GaNyAs1−y, a two-mode phonon behavior using Raman scattering. However, from infrared-ellipsometry or -transmission experiments, we can estimate that the oscillator strength or polarity of the BAs-like phonon is at least one order of magnitude smaller than the oscillator strength of the GaN-like phonon measured at a GaNyAs1−y layer with comparable thickness and composition. All results will be explained using a simple model that takes into account the different nature of the chemical bonds in both alloy types.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number19
DOIs
StatePublished - May 22 2003

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Boron
oscillator strengths
ellipsometry
Raman scattering
critical point
boron
Raman spectra
Bending (forming)
Spectroscopic ellipsometry
Chemical bonds
Ellipsometry
chemical bonds
polarity
Energy gap
Infrared radiation
coefficients
estimates
Chemical analysis
scattering
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Interband transitions and phonon modes in BxGa1−xAs (0 < x < 0.03) and GaNyAs1−y (0 < y < 0.037) : A comparison. / Leibiger, Gunnar; Gottschalch, Volker; Riede, Volker; Schubert, Mathias; Hilfiker, James N.; Tiwald, Thomas E.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 67, No. 19, 22.05.2003.

Research output: Contribution to journalArticle

Leibiger, Gunnar ; Gottschalch, Volker ; Riede, Volker ; Schubert, Mathias ; Hilfiker, James N. ; Tiwald, Thomas E. / Interband transitions and phonon modes in BxGa1−xAs (0 < x < 0.03) and GaNyAs1−y (0 < y < 0.037) : A comparison. In: Physical Review B - Condensed Matter and Materials Physics. 2003 ; Vol. 67, No. 19.
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