### Abstract

We report on the experimental observation of direct interband-critical-point transitions and phonon modes in B_{x}Ga_{1−x}As alloys (0 < x < 0.03) and their evolution with increasing boron concentration using spectroscopic ellipsometry and Raman scattering. Our results are compared to the corresponding values in the GaN_{y}As_{1−y} (0 < y < 0.037) material system. For B_{x}Ga_{1−x}As, we obtain only a small bowing coefficient of the E_{g}(x) dependence in contrast to the giant redshift of the GaN_{y}As_{1−y} band-gap energy with y. The higher lying interband-transition energies of B_{x}Ga_{1−x}As (E_{1}, E_{1} + Δ_{1}, E_{0}′, E_{2}, and E_{1}′) are slightly redshifted with increasing boron concentration. A similar behavior is found for the critical points E_{0}′, E_{2}, and E_{1}′ in GaN_{y}As_{1−y}. In B_{x}Ga_{1−x}As, we observe, as in GaN_{y}As_{1−y}, a two-mode phonon behavior using Raman scattering. However, from infrared-ellipsometry or -transmission experiments, we can estimate that the oscillator strength or polarity of the BAs-like phonon is at least one order of magnitude smaller than the oscillator strength of the GaN-like phonon measured at a GaN_{y}As_{1−y} layer with comparable thickness and composition. All results will be explained using a simple model that takes into account the different nature of the chemical bonds in both alloy types.

Original language | English (US) |
---|---|

Journal | Physical Review B - Condensed Matter and Materials Physics |

Volume | 67 |

Issue number | 19 |

DOIs | |

State | Published - May 22 2003 |

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### ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics

### Cite this

_{x}Ga

_{1−x}As (0 < x < 0.03) and GaN

_{y}As

_{1−y}(0 < y < 0.037): A comparison.

*Physical Review B - Condensed Matter and Materials Physics*,

*67*(19). https://doi.org/10.1103/PhysRevB.67.195205

**Interband transitions and phonon modes in B _{x}Ga_{1−x}As (0 < x < 0.03) and GaN_{y}As_{1−y} (0 < y < 0.037) : A comparison.** / Leibiger, Gunnar; Gottschalch, Volker; Riede, Volker; Schubert, Mathias; Hilfiker, James N.; Tiwald, Thomas E.

Research output: Contribution to journal › Article

_{x}Ga

_{1−x}As (0 < x < 0.03) and GaN

_{y}As

_{1−y}(0 < y < 0.037): A comparison',

*Physical Review B - Condensed Matter and Materials Physics*, vol. 67, no. 19. https://doi.org/10.1103/PhysRevB.67.195205

_{x}Ga

_{1−x}As (0 < x < 0.03) and GaN

_{y}As

_{1−y}(0 < y < 0.037): A comparison. Physical Review B - Condensed Matter and Materials Physics. 2003 May 22;67(19). https://doi.org/10.1103/PhysRevB.67.195205

}

TY - JOUR

T1 - Interband transitions and phonon modes in BxGa1−xAs (0 < x < 0.03) and GaNyAs1−y (0 < y < 0.037)

T2 - A comparison

AU - Leibiger, Gunnar

AU - Gottschalch, Volker

AU - Riede, Volker

AU - Schubert, Mathias

AU - Hilfiker, James N.

AU - Tiwald, Thomas E.

PY - 2003/5/22

Y1 - 2003/5/22

N2 - We report on the experimental observation of direct interband-critical-point transitions and phonon modes in BxGa1−xAs alloys (0 < x < 0.03) and their evolution with increasing boron concentration using spectroscopic ellipsometry and Raman scattering. Our results are compared to the corresponding values in the GaNyAs1−y (0 < y < 0.037) material system. For BxGa1−xAs, we obtain only a small bowing coefficient of the Eg(x) dependence in contrast to the giant redshift of the GaNyAs1−y band-gap energy with y. The higher lying interband-transition energies of BxGa1−xAs (E1, E1 + Δ1, E0′, E2, and E1′) are slightly redshifted with increasing boron concentration. A similar behavior is found for the critical points E0′, E2, and E1′ in GaNyAs1−y. In BxGa1−xAs, we observe, as in GaNyAs1−y, a two-mode phonon behavior using Raman scattering. However, from infrared-ellipsometry or -transmission experiments, we can estimate that the oscillator strength or polarity of the BAs-like phonon is at least one order of magnitude smaller than the oscillator strength of the GaN-like phonon measured at a GaNyAs1−y layer with comparable thickness and composition. All results will be explained using a simple model that takes into account the different nature of the chemical bonds in both alloy types.

AB - We report on the experimental observation of direct interband-critical-point transitions and phonon modes in BxGa1−xAs alloys (0 < x < 0.03) and their evolution with increasing boron concentration using spectroscopic ellipsometry and Raman scattering. Our results are compared to the corresponding values in the GaNyAs1−y (0 < y < 0.037) material system. For BxGa1−xAs, we obtain only a small bowing coefficient of the Eg(x) dependence in contrast to the giant redshift of the GaNyAs1−y band-gap energy with y. The higher lying interband-transition energies of BxGa1−xAs (E1, E1 + Δ1, E0′, E2, and E1′) are slightly redshifted with increasing boron concentration. A similar behavior is found for the critical points E0′, E2, and E1′ in GaNyAs1−y. In BxGa1−xAs, we observe, as in GaNyAs1−y, a two-mode phonon behavior using Raman scattering. However, from infrared-ellipsometry or -transmission experiments, we can estimate that the oscillator strength or polarity of the BAs-like phonon is at least one order of magnitude smaller than the oscillator strength of the GaN-like phonon measured at a GaNyAs1−y layer with comparable thickness and composition. All results will be explained using a simple model that takes into account the different nature of the chemical bonds in both alloy types.

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U2 - 10.1103/PhysRevB.67.195205

DO - 10.1103/PhysRevB.67.195205

M3 - Article

AN - SCOPUS:0038164871

VL - 67

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

ER -