Integrated temperature sensor in Er-doped silicon

Adrian K. Kewell, Graham T. Reed, Fereydoon Namavar

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40-150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes.

Original languageEnglish (US)
Pages (from-to)160-164
Number of pages5
JournalSensors and Actuators, A: Physical
Volume65
Issue number2-3
DOIs
Publication statusPublished - Mar 15 1998

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Keywords

  • Er-doped silicon
  • Luminescence
  • Micromachining
  • Temperature sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

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