Integrated temperature sensor in Er-doped silicon

Adrian K. Kewell, Graham T. Reed, Fereydoon Namavar

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

A temperature sensor is described which is compatible with silicon microelectronics and operates over the range 40-150 K. The measurement principle is based on the analysis of the time decay of the luminescence emitted by erbium-doped silicon. Experimental results are given as proof of principle. The device could be realized using techniques from standard silicon electronics fabrication processes.

Original languageEnglish (US)
Pages (from-to)160-164
Number of pages5
JournalSensors and Actuators, A: Physical
Volume65
Issue number2-3
DOIs
StatePublished - Mar 15 1998

Fingerprint

temperature sensors
Silicon
Temperature sensors
silicon
Erbium
microelectronics
Microelectronics
erbium
Luminescence
Electronic equipment
luminescence
Fabrication
fabrication
decay
electronics

Keywords

  • Er-doped silicon
  • Luminescence
  • Micromachining
  • Temperature sensors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

Integrated temperature sensor in Er-doped silicon. / Kewell, Adrian K.; Reed, Graham T.; Namavar, Fereydoon.

In: Sensors and Actuators, A: Physical, Vol. 65, No. 2-3, 15.03.1998, p. 160-164.

Research output: Contribution to journalArticle

Kewell, Adrian K. ; Reed, Graham T. ; Namavar, Fereydoon. / Integrated temperature sensor in Er-doped silicon. In: Sensors and Actuators, A: Physical. 1998 ; Vol. 65, No. 2-3. pp. 160-164.
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