InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma

Jae E. Oh, Joel D. Lamb, Paul G. Snyder, John A Woollam, David C. Liu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 1011 to 1013 states/eV cm2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.

Original languageEnglish (US)
Pages (from-to)933-940
Number of pages8
JournalSolid State Electronics
Volume29
Issue number9
DOIs
StatePublished - Jan 1 1986

Fingerprint

Carbon films
Management information systems
Amorphous carbon
MIS (semiconductors)
Amorphous films
Ion beams
Sputtering
Carbon
sputtering
ion beams
Plasmas
carbon
Electronic states
electric potential
Bias voltage
electronics
Electronic properties
Capacitance
capacitance
Metals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma. / Oh, Jae E.; Lamb, Joel D.; Snyder, Paul G.; Woollam, John A; Liu, David C.

In: Solid State Electronics, Vol. 29, No. 9, 01.01.1986, p. 933-940.

Research output: Contribution to journalArticle

Oh, Jae E. ; Lamb, Joel D. ; Snyder, Paul G. ; Woollam, John A ; Liu, David C. / InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma. In: Solid State Electronics. 1986 ; Vol. 29, No. 9. pp. 933-940.
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