Infrared to vacuum ultraviolet optical properties of 3C, 4H and 6H silicon carbide measured by spectroscopic ellipsometry

O. P.A. Lindquist, M. Schubert, H. Arwin, K. Järrendahl

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Spectroscopic ellipsometry in the infrared to vacuum ultraviolet (IR-UV SE) is used to determine the optical properties of the three most common polytypes of silicon carbide (SiC), namely the 3C, 4H and 6H polytype in the photon energy region between 0.03 and 9 eV. The results in the IR region, obtained by utilizing a factorized harmonic form of the dielectric function, contain information on free carrier concentrations, phonon modes and effective masses. Since the 4H and 6H polytype crystallizes in a hexagonal frame, it is necessary to consider anisotropy. We report both ordinary (ε⊥c-axis) and extra-ordinary (ε∥c-axis) dielectric function data of 4H- and 6H-SiC. The data in the UV region are also compared to ab initio calculations. Critical point energies were found using both real and reciprocal space analysis.

Original languageEnglish (US)
Pages (from-to)235-238
Number of pages4
JournalThin Solid Films
Volume455-456
DOIs
StatePublished - May 1 2004
EventThe 3rd International Conference on Spectroscopic Ellipsometry - Vienna, Austria
Duration: Jul 6 2003Jul 11 2003

Fingerprint

Spectroscopic ellipsometry
Silicon carbide
silicon carbides
ellipsometry
Optical properties
Vacuum
Infrared radiation
optical properties
vacuum
Carrier concentration
critical point
Anisotropy
Photons
harmonics
anisotropy
energy
photons
silicon carbide

Keywords

  • Critical point
  • Silicon carbide
  • Ultraviolet region

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Infrared to vacuum ultraviolet optical properties of 3C, 4H and 6H silicon carbide measured by spectroscopic ellipsometry. / Lindquist, O. P.A.; Schubert, M.; Arwin, H.; Järrendahl, K.

In: Thin Solid Films, Vol. 455-456, 01.05.2004, p. 235-238.

Research output: Contribution to journalConference article

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T1 - Infrared to vacuum ultraviolet optical properties of 3C, 4H and 6H silicon carbide measured by spectroscopic ellipsometry

AU - Lindquist, O. P.A.

AU - Schubert, M.

AU - Arwin, H.

AU - Järrendahl, K.

PY - 2004/5/1

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N2 - Spectroscopic ellipsometry in the infrared to vacuum ultraviolet (IR-UV SE) is used to determine the optical properties of the three most common polytypes of silicon carbide (SiC), namely the 3C, 4H and 6H polytype in the photon energy region between 0.03 and 9 eV. The results in the IR region, obtained by utilizing a factorized harmonic form of the dielectric function, contain information on free carrier concentrations, phonon modes and effective masses. Since the 4H and 6H polytype crystallizes in a hexagonal frame, it is necessary to consider anisotropy. We report both ordinary (ε⊥c-axis) and extra-ordinary (ε∥c-axis) dielectric function data of 4H- and 6H-SiC. The data in the UV region are also compared to ab initio calculations. Critical point energies were found using both real and reciprocal space analysis.

AB - Spectroscopic ellipsometry in the infrared to vacuum ultraviolet (IR-UV SE) is used to determine the optical properties of the three most common polytypes of silicon carbide (SiC), namely the 3C, 4H and 6H polytype in the photon energy region between 0.03 and 9 eV. The results in the IR region, obtained by utilizing a factorized harmonic form of the dielectric function, contain information on free carrier concentrations, phonon modes and effective masses. Since the 4H and 6H polytype crystallizes in a hexagonal frame, it is necessary to consider anisotropy. We report both ordinary (ε⊥c-axis) and extra-ordinary (ε∥c-axis) dielectric function data of 4H- and 6H-SiC. The data in the UV region are also compared to ab initio calculations. Critical point energies were found using both real and reciprocal space analysis.

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