Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb

P. G. Snyder, T. E. Tiwald, D. W. Thompson, N. J. Ianno, John A Woollam, M. G. Mauk, Z. A. Shellenbarger

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Fourier transform infrared variable angle spectroscopic ellipsometry (0.089-0.620 eV) was used to investigate undoped and Te doped epilayers of In0.15Ga0.85As0.17Sb0.83 on (100) GaSb substrates. The onset of absorption at the bandgap (0.55 eV) was observed in the data for the undoped epilayer. The data below the bandgap for the doped epilayer displayed free carrier characteristics as well as interference effects. They were simulated by including a Drude term in the epilayer and substrate dielectric functions of a multilayer model. This model produced a good fit to the data and provided the epilayer thickness and free carrier plasma frequency. SE measurements above the gap (0.75-5.4 eV) showed only minor effects due to doping.

Original languageEnglish (US)
Pages (from-to)667-670
Number of pages4
JournalThin Solid Films
Volume313-314
DOIs
StatePublished - Feb 13 1998

Fingerprint

Epilayers
Infrared radiation
carrier frequencies
plasma frequencies
ellipsometry
interference
Energy gap
Spectroscopic ellipsometry
Substrates
Fourier transforms
Multilayers
Doping (additives)
Plasmas

Keywords

  • Ellipsometry
  • Free carrier response
  • Infrared dielectric function

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Snyder, P. G., Tiwald, T. E., Thompson, D. W., Ianno, N. J., Woollam, J. A., Mauk, M. G., & Shellenbarger, Z. A. (1998). Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb. Thin Solid Films, 313-314, 667-670. https://doi.org/10.1016/S0040-6090(97)00974-7

Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb. / Snyder, P. G.; Tiwald, T. E.; Thompson, D. W.; Ianno, N. J.; Woollam, John A; Mauk, M. G.; Shellenbarger, Z. A.

In: Thin Solid Films, Vol. 313-314, 13.02.1998, p. 667-670.

Research output: Contribution to journalArticle

Snyder, PG, Tiwald, TE, Thompson, DW, Ianno, NJ, Woollam, JA, Mauk, MG & Shellenbarger, ZA 1998, 'Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb', Thin Solid Films, vol. 313-314, pp. 667-670. https://doi.org/10.1016/S0040-6090(97)00974-7
Snyder, P. G. ; Tiwald, T. E. ; Thompson, D. W. ; Ianno, N. J. ; Woollam, John A ; Mauk, M. G. ; Shellenbarger, Z. A. / Infrared free carrier response of In0.15Ga0.85As0.17Sb0.83 epilayers on GaSb. In: Thin Solid Films. 1998 ; Vol. 313-314. pp. 667-670.
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AU - Ianno, N. J.

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AU - Shellenbarger, Z. A.

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AB - Fourier transform infrared variable angle spectroscopic ellipsometry (0.089-0.620 eV) was used to investigate undoped and Te doped epilayers of In0.15Ga0.85As0.17Sb0.83 on (100) GaSb substrates. The onset of absorption at the bandgap (0.55 eV) was observed in the data for the undoped epilayer. The data below the bandgap for the doped epilayer displayed free carrier characteristics as well as interference effects. They were simulated by including a Drude term in the epilayer and substrate dielectric functions of a multilayer model. This model produced a good fit to the data and provided the epilayer thickness and free carrier plasma frequency. SE measurements above the gap (0.75-5.4 eV) showed only minor effects due to doping.

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