Infrared ellipsometry on hexagonal and cubic boron nitride thin films

E. Franke, H. Neumann, M. Schubert, T. E. Tiwald, J. A. Woollam, J. Hahn

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.

Original languageEnglish (US)
Pages (from-to)1668-1670
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number13
DOIs
StatePublished - Mar 31 1997

Fingerprint

boron nitrides
ellipsometry
thin films
magnetron sputtering
microstructure
silicon
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Infrared ellipsometry on hexagonal and cubic boron nitride thin films. / Franke, E.; Neumann, H.; Schubert, M.; Tiwald, T. E.; Woollam, J. A.; Hahn, J.

In: Applied Physics Letters, Vol. 70, No. 13, 31.03.1997, p. 1668-1670.

Research output: Contribution to journalArticle

Franke, E. ; Neumann, H. ; Schubert, M. ; Tiwald, T. E. ; Woollam, J. A. ; Hahn, J. / Infrared ellipsometry on hexagonal and cubic boron nitride thin films. In: Applied Physics Letters. 1997 ; Vol. 70, No. 13. pp. 1668-1670.
@article{6a6f0519f17d4f5b9ba339d58dbca165,
title = "Infrared ellipsometry on hexagonal and cubic boron nitride thin films",
abstract = "Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.",
author = "E. Franke and H. Neumann and M. Schubert and Tiwald, {T. E.} and Woollam, {J. A.} and J. Hahn",
year = "1997",
month = "3",
day = "31",
doi = "10.1063/1.118655",
language = "English (US)",
volume = "70",
pages = "1668--1670",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "13",

}

TY - JOUR

T1 - Infrared ellipsometry on hexagonal and cubic boron nitride thin films

AU - Franke, E.

AU - Neumann, H.

AU - Schubert, M.

AU - Tiwald, T. E.

AU - Woollam, J. A.

AU - Hahn, J.

PY - 1997/3/31

Y1 - 1997/3/31

N2 - Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.

AB - Infrared spectroscopic ellipsometry (IRSE) over the wavelength range from 700 to 3000 cm-1 has been used to study and distinguish the microstructure of polycrystalline hexagonal and cubic boron nitride thin films deposited by magnetron sputtering onto (100) silicon. The IRSE data are sensitive to the thin-film layer structure, phase composition, and average grain c-axes orientations of the hexagonal phase. We determine the amount of cubic material in high cubic boron nitride content thin films from the infrared optical dielectric function using an effective medium approach.

UR - http://www.scopus.com/inward/record.url?scp=0005840859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005840859&partnerID=8YFLogxK

U2 - 10.1063/1.118655

DO - 10.1063/1.118655

M3 - Article

AN - SCOPUS:0005840859

VL - 70

SP - 1668

EP - 1670

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

ER -