Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties

V. Darakchieva, P. P. Paskov, E. Valcheva, T. Paskova, M. Schubert, C. Bundesmann, H. Lu, W. J. Schaff, B. Monemar

Research output: Contribution to journalConference article

14 Scopus citations

Abstract

The vibrational properties of InN films with different strain have been studied using Infrared ellipsometry and Raman scattering spectroscopy. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and the strain-free frequencies of the InN E1(TO) and E2 modes. The LO phonons and their coupling to the free-carrier plasmon excitations are also discussed in relation to the carrier concentration in the films.

Original languageEnglish (US)
Pages (from-to)573-580
Number of pages8
JournalSuperlattices and Microstructures
Volume36
Issue number4-6
DOIs
StatePublished - Oct 1 2004
EventEuropean Materials Research Society 2004, Symposium L. InN - Strasbourg, France
Duration: May 24 2004May 28 2004

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Darakchieva, V., Paskov, P. P., Valcheva, E., Paskova, T., Schubert, M., Bundesmann, C., Lu, H., Schaff, W. J., & Monemar, B. (2004). Infrared ellipsometry and Raman studies of hexagonal InN films: Correlation between strain and vibrational properties. Superlattices and Microstructures, 36(4-6), 573-580. https://doi.org/10.1016/j.spmi.2004.09.014