Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

Mathias Schubert, A. Kasic, S. Einfeldt, D. Hommel, U. Köhler, D. J. As, J. Off, B. Kuhn, F. Scholz, John A Woollam

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

Original languageEnglish (US)
Pages (from-to)437-440
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number2
DOIs
StatePublished - Nov 1 2001

Fingerprint

Ellipsometry
optoelectronic devices
Nitrides
Optoelectronic devices
ellipsometry
nitrides
Heterojunctions
Infrared radiation
Vapor phase epitaxy
Aluminum Oxide
Sapphire
vapor phase epitaxy
wurtzite
Light emitting diodes
sapphire
light emitting diodes
Metals
electronics
metals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications. / Schubert, Mathias; Kasic, A.; Einfeldt, S.; Hommel, D.; Köhler, U.; As, D. J.; Off, J.; Kuhn, B.; Scholz, F.; Woollam, John A.

In: Physica Status Solidi (B) Basic Research, Vol. 228, No. 2, 01.11.2001, p. 437-440.

Research output: Contribution to journalArticle

Schubert, Mathias ; Kasic, A. ; Einfeldt, S. ; Hommel, D. ; Köhler, U. ; As, D. J. ; Off, J. ; Kuhn, B. ; Scholz, F. ; Woollam, John A. / Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications. In: Physica Status Solidi (B) Basic Research. 2001 ; Vol. 228, No. 2. pp. 437-440.
@article{980ea75796974da5bd2094694bd7c001,
title = "Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications",
abstract = "We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.",
author = "Mathias Schubert and A. Kasic and S. Einfeldt and D. Hommel and U. K{\"o}hler and As, {D. J.} and J. Off and B. Kuhn and F. Scholz and Woollam, {John A}",
year = "2001",
month = "11",
day = "1",
doi = "10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E",
language = "English (US)",
volume = "228",
pages = "437--440",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "2",

}

TY - JOUR

T1 - Infrared ellipsometry - A novel tool for characterization of group-III nitride heterostructures for optoelectronic device applications

AU - Schubert, Mathias

AU - Kasic, A.

AU - Einfeldt, S.

AU - Hommel, D.

AU - Köhler, U.

AU - As, D. J.

AU - Off, J.

AU - Kuhn, B.

AU - Scholz, F.

AU - Woollam, John A

PY - 2001/11/1

Y1 - 2001/11/1

N2 - We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

AB - We demonstrate the application of spectroscopic infrared ellipsometry to determine nondestructively the free-carrier distribution in group-III nitride heterostructures, such as for optoelectronic and electronic device applications. Results are shown for a blue-light emitting diode structure based on wurtzite III-N materials grown on (0001) sapphire by metal-organic vapor phase epitaxy.

UR - http://www.scopus.com/inward/record.url?scp=0001604875&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001604875&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

DO - 10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E

M3 - Article

VL - 228

SP - 437

EP - 440

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 2

ER -