Infrared ellipsometric characterization of silicon nitride films on textured Si photovoltaic cells

M. F. Saenger, M. Schädel, T. Hofmann, J. Hilfiker, J. Sun, T. Tiwald, M. Schubert, J. A. Woollam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

We present an infrared spectroscopic ellipsometry investigation of Si xNy films deposited on textured Si substrates employed for photovoltaic cells. A multiple-sample data analysis scheme is used in order to determine the SixNy dielectric function and thickness parameters regardless of the surface morphology of the substrate. We observe changes in the dielectric function of the silicon nitride film which suggest variations in the chemical composition of the films depending on the substrate morphology.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues
Pages145-150
Number of pages6
Publication statusPublished - Dec 1 2009
Event2008 MRS Fall Meeting - Boston, MA, United States
Duration: Dec 1 2008Dec 4 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1123
ISSN (Print)0272-9172

Other

Other2008 MRS Fall Meeting
CountryUnited States
CityBoston, MA
Period12/1/0812/4/08

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Saenger, M. F., Schädel, M., Hofmann, T., Hilfiker, J., Sun, J., Tiwald, T., ... Woollam, J. A. (2009). Infrared ellipsometric characterization of silicon nitride films on textured Si photovoltaic cells. In Materials Research Society Symposium Proceedings - Photovoltaic Materials and Manufacturing Issues (pp. 145-150). (Materials Research Society Symposium Proceedings; Vol. 1123).