Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1- xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

S. Schöche, T. Hofmann, D. Nilsson, A. Kakanakova-Georgieva, E. Janzén, P. Kühne, K. Lorenz, Mathias Schubert, V. Darakchieva

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on the analysis of a combined mid-infrared spectroscopic ellipsometry and mid-infrared optical Hall effect investigation of wurtzite structure c-plane oriented, crack-free, single crystalline, and high-Al-content AlxGa1-xN layers on 4H-SiC. For high-Al-content AlxGa1-xN, a two mode behavior is observed for both transverse and longitudinal branches of the infrared-active modes with E1 symmetry, while a single mode behavior is found for the longitudinal modes with A1(LO) symmetry. We report their mode dependencies on the Al content. We determine and discuss static and high frequency dielectric constants depending on x. From the analysis of the optical Hall effect data, we determine the effective mass parameter in high-Al-content AlxGa1-xN alloys and its composition dependence. Within the experimental uncertainty limits, the effective mass parameters are found isotropic, which depend linearly on the Al content. The combination of all data permits the quantification of the free electron density N and mobility parameters μ.

Original languageEnglish (US)
Article number205701
JournalJournal of Applied Physics
Volume121
Issue number20
DOIs
StatePublished - May 28 2017

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ellipsometry
Hall effect
charge carriers
symmetry
wurtzite
free electrons
cracks
permittivity

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1- xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect. / Schöche, S.; Hofmann, T.; Nilsson, D.; Kakanakova-Georgieva, A.; Janzén, E.; Kühne, P.; Lorenz, K.; Schubert, Mathias; Darakchieva, V.

In: Journal of Applied Physics, Vol. 121, No. 20, 205701, 28.05.2017.

Research output: Contribution to journalArticle

Schöche, S. ; Hofmann, T. ; Nilsson, D. ; Kakanakova-Georgieva, A. ; Janzén, E. ; Kühne, P. ; Lorenz, K. ; Schubert, Mathias ; Darakchieva, V. / Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1- xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect. In: Journal of Applied Physics. 2017 ; Vol. 121, No. 20.
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AU - Schöche, S.

AU - Hofmann, T.

AU - Nilsson, D.

AU - Kakanakova-Georgieva, A.

AU - Janzén, E.

AU - Kühne, P.

AU - Lorenz, K.

AU - Schubert, Mathias

AU - Darakchieva, V.

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