Infrared dielectric function and phonon modes of highly disordered (AlxGa1 - x)0.52In0.48P

T. Hofmann, G. Leiberger, V. Gottschalch, I. Pietzonka, M. Schubert

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30 Citations (Scopus)

Abstract

Dielectric function spectra and phonon modes of highly disordered (AlxGa1 - x)0.48In0.52P, i.e., solid solutions with nearly randomly distributed cations, lattice matched to GaAs, are studied for A1 compositions x = 0, 0.33, 0.48, 0.7, 0.82, and 1 using far-infrared ellipsometry and Raman scattering. An anharmonic oscillator model approach is employed for line-shape analysis of the (AlxGa1 - x)0.48In0.52P dielectric function. A complex phonon mode behavior for the random-alloy solid solutions is found: (i) two (one weak GaP-like and one strong InP-like or one weak InP-like and one strong A1P-like with TO-LO splitting) bands are present in Ga0.52In0.48P and A10.52In0.48P, respectively, (ii) three (one weak GaP-like, one weak A1P-like, and one strong InP-like) bands dominate the quaternary compounds for x < 0.5, (iii) the GaP-like band is absent for x > 0.5, and (iv) three additional modes (AM's) with low polarity occur with small composition dependencies at AM1 ∼ 313 cm-1, AM2 ∼ 351 cm-1, and AM3 ∼ 390-405 cm-1, respectively. Results from polarized Raman measurements agree excellently with the mode scheme developed from the ellipsometry study. Modes AM1 and AM2 coincide with CuPt-type superlattice-ordering-induced lattice modes, predicted recently for Ga0.52In0.48P from first-principles calculations IV. Ozoliņš and A. Zunger, Phys. Rev. B 57, R9404 (1998)] and may be used to identify small degrees of ordering in A1GaInP by far-infrared ellipsometry.

Original languageEnglish (US)
Article number155206
Pages (from-to)1552061-15520611
Number of pages13968551
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number15
StatePublished - Oct 15 2001

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Ellipsometry
Infrared radiation
Solid solutions
ellipsometry
Chemical analysis
Cations
Raman scattering
solid solutions
Positive ions
line shape
polarity
oscillators
Raman spectra
cations
scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Infrared dielectric function and phonon modes of highly disordered (AlxGa1 - x)0.52In0.48P. / Hofmann, T.; Leiberger, G.; Gottschalch, V.; Pietzonka, I.; Schubert, M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 15, 155206, 15.10.2001, p. 1552061-15520611.

Research output: Contribution to journalArticle

Hofmann, T, Leiberger, G, Gottschalch, V, Pietzonka, I & Schubert, M 2001, 'Infrared dielectric function and phonon modes of highly disordered (AlxGa1 - x)0.52In0.48P', Physical Review B - Condensed Matter and Materials Physics, vol. 64, no. 15, 155206, pp. 1552061-15520611.
Hofmann, T. ; Leiberger, G. ; Gottschalch, V. ; Pietzonka, I. ; Schubert, M. / Infrared dielectric function and phonon modes of highly disordered (AlxGa1 - x)0.52In0.48P. In: Physical Review B - Condensed Matter and Materials Physics. 2001 ; Vol. 64, No. 15. pp. 1552061-15520611.
@article{77eaffe5ff934d2b9413da93b89690f2,
title = "Infrared dielectric function and phonon modes of highly disordered (AlxGa1 - x)0.52In0.48P",
abstract = "Dielectric function spectra and phonon modes of highly disordered (AlxGa1 - x)0.48In0.52P, i.e., solid solutions with nearly randomly distributed cations, lattice matched to GaAs, are studied for A1 compositions x = 0, 0.33, 0.48, 0.7, 0.82, and 1 using far-infrared ellipsometry and Raman scattering. An anharmonic oscillator model approach is employed for line-shape analysis of the (AlxGa1 - x)0.48In0.52P dielectric function. A complex phonon mode behavior for the random-alloy solid solutions is found: (i) two (one weak GaP-like and one strong InP-like or one weak InP-like and one strong A1P-like with TO-LO splitting) bands are present in Ga0.52In0.48P and A10.52In0.48P, respectively, (ii) three (one weak GaP-like, one weak A1P-like, and one strong InP-like) bands dominate the quaternary compounds for x < 0.5, (iii) the GaP-like band is absent for x > 0.5, and (iv) three additional modes (AM's) with low polarity occur with small composition dependencies at AM1 ∼ 313 cm-1, AM2 ∼ 351 cm-1, and AM3 ∼ 390-405 cm-1, respectively. Results from polarized Raman measurements agree excellently with the mode scheme developed from the ellipsometry study. Modes AM1 and AM2 coincide with CuPt-type superlattice-ordering-induced lattice modes, predicted recently for Ga0.52In0.48P from first-principles calculations IV. Ozoliņš and A. Zunger, Phys. Rev. B 57, R9404 (1998)] and may be used to identify small degrees of ordering in A1GaInP by far-infrared ellipsometry.",
author = "T. Hofmann and G. Leiberger and V. Gottschalch and I. Pietzonka and M. Schubert",
year = "2001",
month = "10",
day = "15",
language = "English (US)",
volume = "64",
pages = "1552061--15520611",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

TY - JOUR

T1 - Infrared dielectric function and phonon modes of highly disordered (AlxGa1 - x)0.52In0.48P

AU - Hofmann, T.

AU - Leiberger, G.

AU - Gottschalch, V.

AU - Pietzonka, I.

AU - Schubert, M.

PY - 2001/10/15

Y1 - 2001/10/15

N2 - Dielectric function spectra and phonon modes of highly disordered (AlxGa1 - x)0.48In0.52P, i.e., solid solutions with nearly randomly distributed cations, lattice matched to GaAs, are studied for A1 compositions x = 0, 0.33, 0.48, 0.7, 0.82, and 1 using far-infrared ellipsometry and Raman scattering. An anharmonic oscillator model approach is employed for line-shape analysis of the (AlxGa1 - x)0.48In0.52P dielectric function. A complex phonon mode behavior for the random-alloy solid solutions is found: (i) two (one weak GaP-like and one strong InP-like or one weak InP-like and one strong A1P-like with TO-LO splitting) bands are present in Ga0.52In0.48P and A10.52In0.48P, respectively, (ii) three (one weak GaP-like, one weak A1P-like, and one strong InP-like) bands dominate the quaternary compounds for x < 0.5, (iii) the GaP-like band is absent for x > 0.5, and (iv) three additional modes (AM's) with low polarity occur with small composition dependencies at AM1 ∼ 313 cm-1, AM2 ∼ 351 cm-1, and AM3 ∼ 390-405 cm-1, respectively. Results from polarized Raman measurements agree excellently with the mode scheme developed from the ellipsometry study. Modes AM1 and AM2 coincide with CuPt-type superlattice-ordering-induced lattice modes, predicted recently for Ga0.52In0.48P from first-principles calculations IV. Ozoliņš and A. Zunger, Phys. Rev. B 57, R9404 (1998)] and may be used to identify small degrees of ordering in A1GaInP by far-infrared ellipsometry.

AB - Dielectric function spectra and phonon modes of highly disordered (AlxGa1 - x)0.48In0.52P, i.e., solid solutions with nearly randomly distributed cations, lattice matched to GaAs, are studied for A1 compositions x = 0, 0.33, 0.48, 0.7, 0.82, and 1 using far-infrared ellipsometry and Raman scattering. An anharmonic oscillator model approach is employed for line-shape analysis of the (AlxGa1 - x)0.48In0.52P dielectric function. A complex phonon mode behavior for the random-alloy solid solutions is found: (i) two (one weak GaP-like and one strong InP-like or one weak InP-like and one strong A1P-like with TO-LO splitting) bands are present in Ga0.52In0.48P and A10.52In0.48P, respectively, (ii) three (one weak GaP-like, one weak A1P-like, and one strong InP-like) bands dominate the quaternary compounds for x < 0.5, (iii) the GaP-like band is absent for x > 0.5, and (iv) three additional modes (AM's) with low polarity occur with small composition dependencies at AM1 ∼ 313 cm-1, AM2 ∼ 351 cm-1, and AM3 ∼ 390-405 cm-1, respectively. Results from polarized Raman measurements agree excellently with the mode scheme developed from the ellipsometry study. Modes AM1 and AM2 coincide with CuPt-type superlattice-ordering-induced lattice modes, predicted recently for Ga0.52In0.48P from first-principles calculations IV. Ozoliņš and A. Zunger, Phys. Rev. B 57, R9404 (1998)] and may be used to identify small degrees of ordering in A1GaInP by far-infrared ellipsometry.

UR - http://www.scopus.com/inward/record.url?scp=0035887499&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035887499&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0035887499

VL - 64

SP - 1552061

EP - 15520611

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 15

M1 - 155206

ER -