Influence of WC-Co substrate pretreatment on diamond film deposition by laser-assisted combustion synthesis

Ameélie Veillère, Thomas Guillemet, Zhi Qiang Xie, Craig A. Zuhlke, Dennis R. Alexander, Jean Franĉois Silvain, Jean Marc Heintz, Namas Chandra, Yong Feng Lu

Research output: Contribution to journalArticle

14 Scopus citations


The quality of diamond films deposited on cemented tungsten carbide substrates (WC-Co) is limited by the presence of the cobalt binder. The cobalt in the WC-Co substrates enhances the formation of nondiamond carbon on the substrate surface, resulting in a poor film adhesion and a low diamond quality. In this study, we investigated pretreatments of WC-Co substrates in three different approaches, namely, chemical etching, laser etching, and laser etching followed by acid treatment. The laser produces a periodic surface pattern, thus increasing the roughness and releasing the stress at the interfaces between the substrate and the grown diamond film. Effects of these pretreatments have been analyzed in terms of microstructure and cobalt content. Raman spectroscopy was conducted to characterize both the diamond quality and compressive residual stress in the films.

Original languageEnglish (US)
Pages (from-to)1134-1139
Number of pages6
JournalACS Applied Materials and Interfaces
Issue number4
StatePublished - Apr 27 2011



  • Raman spectroscopy
  • chemical and laser etchings
  • cobalt diffusion
  • diamond
  • residual stress
  • substrate pretreatment

ASJC Scopus subject areas

  • Materials Science(all)

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