Influence of substrate temperature and ion-beam energy on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed-laser deposition

Y. W. Goh, Yongfeng Lu, Z. M. Ren, T. C. Chong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Aluminium nitride (AlN) thin films have been grown on Si(100), Si(111) and Sapphire Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of an AlN target with the assistance of nitrogen-ion-beam bombardment. The influence of process parameters such as substrate temperature and ion-beam energy has been investigated in order to obtain high-quality AlN films. The AlN films deposited by pulsed-laser deposition (PLD) have been characterized by X-ray diffraction (XRD) to determine the crystalline quality, grain size and growth orientation with respect to the substrate. The XRD spectra of AlN films on Si(100), Si(111) and Sapphire substrates yield full-width-half-maximum (FWHM) values of approximately 2.3-1.6°. The bonding characteristics in the films have been evaluated by Raman spectroscopy. The chemical composition of the films has been characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films has been measured by atomic force microscopy (AFM). At a substrate temperature of at least 600°C, polycrystalline AlN films with orientations of AlN(100) and AlN(101) have been synthesized.

Original languageEnglish (US)
Pages (from-to)433-439
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Volume77
Issue number3-4
DOIs
StatePublished - Aug 1 2003

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Aluminum nitride
nitrogen ions
aluminum nitrides
Pulsed laser deposition
Ion beams
pulsed laser deposition
Nitrogen
ion beams
Ions
Thin films
Substrates
synthesis
thin films
Temperature
temperature
energy
Aluminum Oxide
Sapphire
sapphire
X ray diffraction

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

Cite this

@article{9f39fc7a0e064f1589900d7a994e8fe6,
title = "Influence of substrate temperature and ion-beam energy on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed-laser deposition",
abstract = "Aluminium nitride (AlN) thin films have been grown on Si(100), Si(111) and Sapphire Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of an AlN target with the assistance of nitrogen-ion-beam bombardment. The influence of process parameters such as substrate temperature and ion-beam energy has been investigated in order to obtain high-quality AlN films. The AlN films deposited by pulsed-laser deposition (PLD) have been characterized by X-ray diffraction (XRD) to determine the crystalline quality, grain size and growth orientation with respect to the substrate. The XRD spectra of AlN films on Si(100), Si(111) and Sapphire substrates yield full-width-half-maximum (FWHM) values of approximately 2.3-1.6°. The bonding characteristics in the films have been evaluated by Raman spectroscopy. The chemical composition of the films has been characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films has been measured by atomic force microscopy (AFM). At a substrate temperature of at least 600°C, polycrystalline AlN films with orientations of AlN(100) and AlN(101) have been synthesized.",
author = "Goh, {Y. W.} and Yongfeng Lu and Ren, {Z. M.} and Chong, {T. C.}",
year = "2003",
month = "8",
day = "1",
doi = "10.1007/s00339-002-1452-2",
language = "English (US)",
volume = "77",
pages = "433--439",
journal = "Applied Physics A: Materials Science and Processing",
issn = "0947-8396",
number = "3-4",

}

TY - JOUR

T1 - Influence of substrate temperature and ion-beam energy on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed-laser deposition

AU - Goh, Y. W.

AU - Lu, Yongfeng

AU - Ren, Z. M.

AU - Chong, T. C.

PY - 2003/8/1

Y1 - 2003/8/1

N2 - Aluminium nitride (AlN) thin films have been grown on Si(100), Si(111) and Sapphire Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of an AlN target with the assistance of nitrogen-ion-beam bombardment. The influence of process parameters such as substrate temperature and ion-beam energy has been investigated in order to obtain high-quality AlN films. The AlN films deposited by pulsed-laser deposition (PLD) have been characterized by X-ray diffraction (XRD) to determine the crystalline quality, grain size and growth orientation with respect to the substrate. The XRD spectra of AlN films on Si(100), Si(111) and Sapphire substrates yield full-width-half-maximum (FWHM) values of approximately 2.3-1.6°. The bonding characteristics in the films have been evaluated by Raman spectroscopy. The chemical composition of the films has been characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films has been measured by atomic force microscopy (AFM). At a substrate temperature of at least 600°C, polycrystalline AlN films with orientations of AlN(100) and AlN(101) have been synthesized.

AB - Aluminium nitride (AlN) thin films have been grown on Si(100), Si(111) and Sapphire Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of an AlN target with the assistance of nitrogen-ion-beam bombardment. The influence of process parameters such as substrate temperature and ion-beam energy has been investigated in order to obtain high-quality AlN films. The AlN films deposited by pulsed-laser deposition (PLD) have been characterized by X-ray diffraction (XRD) to determine the crystalline quality, grain size and growth orientation with respect to the substrate. The XRD spectra of AlN films on Si(100), Si(111) and Sapphire substrates yield full-width-half-maximum (FWHM) values of approximately 2.3-1.6°. The bonding characteristics in the films have been evaluated by Raman spectroscopy. The chemical composition of the films has been characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films has been measured by atomic force microscopy (AFM). At a substrate temperature of at least 600°C, polycrystalline AlN films with orientations of AlN(100) and AlN(101) have been synthesized.

UR - http://www.scopus.com/inward/record.url?scp=0042157262&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042157262&partnerID=8YFLogxK

U2 - 10.1007/s00339-002-1452-2

DO - 10.1007/s00339-002-1452-2

M3 - Article

VL - 77

SP - 433

EP - 439

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

SN - 0947-8396

IS - 3-4

ER -