Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films

Jun Zhang, X. Z. Li, B. Xu, David J Sellmyer

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49 Citations (Scopus)

Abstract

We report the magnetic properties of Cr-doped AlN thin films grown by reactive magnetron sputtering under various nitrogen pressures. Ferromagnetism is observed up to the highest temperature measured, 400 K, and shows strong dependence on the Cr concentration and, especially, the nitrogen growth pressure. By varying the nitrogen pressure during film growth, the magnetic properties of the films can be changed while keeping a constant Cr concentration. The ferromagnetism is enhanced in the films that were grown at low nitrogen pressures and thus nitrogen deficient, suggesting an important role of defects in the ferromagnetism of this material.

Original languageEnglish (US)
Article number212504
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number21
DOIs
StatePublished - May 23 2005

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nitrogen
ferromagnetism
thin films
magnetic properties
magnetron sputtering
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Influence of nitrogen growth pressure on the ferromagnetic properties of Cr-doped AlN thin films. / Zhang, Jun; Li, X. Z.; Xu, B.; Sellmyer, David J.

In: Applied Physics Letters, Vol. 86, No. 21, 212504, 23.05.2005, p. 1-3.

Research output: Contribution to journalArticle

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