Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition

Goh Yeow Whatt, Y. F. Lu, Z. M. Ren, T. C. Chong

Research output: Contribution to journalConference article


Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.

Original languageEnglish (US)
Pages (from-to)241-244
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - Jan 1 2002
EventSecond International Symposium on Laser Precision Microfabrication - Singapore, Singapore
Duration: May 16 2001May 18 2001



  • AFM
  • Aluminium Nitride
  • Laser Ablation
  • Thin Films
  • XPS
  • XRD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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