Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition

Goh Yeow Whatt, Yongfeng Lu, Z. M. Ren, T. C. Chong

Research output: Contribution to journalConference article

Abstract

Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.

Original languageEnglish (US)
Pages (from-to)241-244
Number of pages4
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4426
DOIs
StatePublished - Jan 1 2002
EventSecond International Symposium on Laser Precision Microfabrication - Singapore, Singapore
Duration: May 16 2001May 18 2001

Fingerprint

Pulsed Laser Deposition
Aluminum Nitride
Aluminum nitride
nitrogen ions
aluminum nitrides
Pulsed laser deposition
Nitrogen
pulsed laser deposition
Thin Films
repetition
fluence
Ions
Synthesis
Laser
Thin films
Lasers
synthesis
thin films
Substrate
lasers

Keywords

  • AFM
  • Aluminium Nitride
  • Laser Ablation
  • Thin Films
  • XPS
  • XRD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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title = "Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition",
abstract = "Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.",
keywords = "AFM, Aluminium Nitride, Laser Ablation, Thin Films, XPS, XRD",
author = "Whatt, {Goh Yeow} and Yongfeng Lu and Ren, {Z. M.} and Chong, {T. C.}",
year = "2002",
month = "1",
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TY - JOUR

T1 - Influence of laser fluence and laser repetition rate on the syntheses of aluminium nitride thin films by nitrogen-ion-assisted pulsed laser deposition

AU - Whatt, Goh Yeow

AU - Lu, Yongfeng

AU - Ren, Z. M.

AU - Chong, T. C.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.

AB - Aluminium nitride (AlN) thin films have been grown on Si(111) and Al2O3(001) substrates by pulsed KrF excimer laser (wavelength 248 nm, duration 30 ns) ablation of AlN target with assistance of nitrogen ion beam bombardment. The influence of process parameters such as laser fluence and laser repetition rate has been investigated to obtain high quality AlN films. The XRD spectra of AlN films on Si(111) and Al2O3(001) substrates yield full-width-half-maximum (FWHM) values of ∼2.1-1.7°. The chemical composition of the films is characterized by X-ray photoelectron spectroscopy (XPS). The surface morphology of the films is measured by atomic force microscope (AFM). Al2O3(001) substrate shows better matching with the AlN films since highest crystallite size can be achieved among the different type of substrates evaluated. Better quality AlN films (with bigger crystallite size) can be achieved with higher laser fluence of 6 J/cm2 and an optimum laser repetition rate of 7 Hz.

KW - AFM

KW - Aluminium Nitride

KW - Laser Ablation

KW - Thin Films

KW - XPS

KW - XRD

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