In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

Sean Knight, Tino Hofmann, Chamseddine Bouhafs, Nerijus Armakavicius, Philipp Kühne, Vallery Stanishev, Ivan G. Ivanov, Rositsa Yakimova, Shawn Wimer, Mathias Schubert, Vanya Darakchieva

Research output: Contribution to journalArticle

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Abstract

Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.

Original languageEnglish (US)
Article number5151
JournalScientific Reports
Volume7
Issue number1
DOIs
StatePublished - Dec 1 2017

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Hall effect
charge carriers
graphene
rare gases
Lorentz force
silicon carbides
birefringence
humidity
analogs
electrical resistivity
electric fields
silicon
scattering
electronics
magnetic fields
electrons

ASJC Scopus subject areas

  • General

Cite this

Knight, S., Hofmann, T., Bouhafs, C., Armakavicius, N., Kühne, P., Stanishev, V., ... Darakchieva, V. (2017). In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene. Scientific Reports, 7(1), [5151]. https://doi.org/10.1038/s41598-017-05333-w

In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene. / Knight, Sean; Hofmann, Tino; Bouhafs, Chamseddine; Armakavicius, Nerijus; Kühne, Philipp; Stanishev, Vallery; Ivanov, Ivan G.; Yakimova, Rositsa; Wimer, Shawn; Schubert, Mathias; Darakchieva, Vanya.

In: Scientific Reports, Vol. 7, No. 1, 5151, 01.12.2017.

Research output: Contribution to journalArticle

Knight, S, Hofmann, T, Bouhafs, C, Armakavicius, N, Kühne, P, Stanishev, V, Ivanov, IG, Yakimova, R, Wimer, S, Schubert, M & Darakchieva, V 2017, 'In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene', Scientific Reports, vol. 7, no. 1, 5151. https://doi.org/10.1038/s41598-017-05333-w
Knight, Sean ; Hofmann, Tino ; Bouhafs, Chamseddine ; Armakavicius, Nerijus ; Kühne, Philipp ; Stanishev, Vallery ; Ivanov, Ivan G. ; Yakimova, Rositsa ; Wimer, Shawn ; Schubert, Mathias ; Darakchieva, Vanya. / In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene. In: Scientific Reports. 2017 ; Vol. 7, No. 1.
@article{64f0ea3197df4b16a9c8335d6a958e7f,
title = "In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene",
abstract = "Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.",
author = "Sean Knight and Tino Hofmann and Chamseddine Bouhafs and Nerijus Armakavicius and Philipp K{\"u}hne and Vallery Stanishev and Ivanov, {Ivan G.} and Rositsa Yakimova and Shawn Wimer and Mathias Schubert and Vanya Darakchieva",
year = "2017",
month = "12",
day = "1",
doi = "10.1038/s41598-017-05333-w",
language = "English (US)",
volume = "7",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

AU - Knight, Sean

AU - Hofmann, Tino

AU - Bouhafs, Chamseddine

AU - Armakavicius, Nerijus

AU - Kühne, Philipp

AU - Stanishev, Vallery

AU - Ivanov, Ivan G.

AU - Yakimova, Rositsa

AU - Wimer, Shawn

AU - Schubert, Mathias

AU - Darakchieva, Vanya

PY - 2017/12/1

Y1 - 2017/12/1

N2 - Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.

AB - Unraveling the doping-related charge carrier scattering mechanisms in two-dimensional materials such as graphene is vital for limiting parasitic electrical conductivity losses in future electronic applications. While electric field doping is well understood, assessment of mobility and density as a function of chemical doping remained a challenge thus far. In this work, we investigate the effects of cyclically exposing epitaxial graphene to controlled inert gases and ambient humidity conditions, while measuring the Lorentz force-induced birefringence in graphene at Terahertz frequencies in magnetic fields. This technique, previously identified as the optical analogue of the electrical Hall effect, permits here measurement of charge carrier type, density, and mobility in epitaxial graphene on silicon-face silicon carbide. We observe a distinct, nearly linear relationship between mobility and electron charge density, similar to field-effect induced changes measured in electrical Hall bar devices previously. The observed doping process is completely reversible and independent of the type of inert gas exposure.

UR - http://www.scopus.com/inward/record.url?scp=85023168316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85023168316&partnerID=8YFLogxK

U2 - 10.1038/s41598-017-05333-w

DO - 10.1038/s41598-017-05333-w

M3 - Article

VL - 7

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 5151

ER -