In situ studies of electron cyclotron resonance plasma etching of semiconductors by spectroscopic ellipsometry

S. Nafis, N. J. Ianno, Paul G. Snyder, John A. Woollam, Johs Blaine

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In situ ellipsometry at selected wavelengths in the spectral range 280 nm to 1000 nm was performed during the rf bias assisted electron cyclotron resonance (ECR) etching of bulk silicon, GaAs, InP, and GaAs/AlGaAs/GaAs, and InGaAs/InP layered structures by a CCl2F2 based etch gas. While real time thickness changes for bulk materials cannot be determined ellipsometrically, some insight into the etch mechanism may be gained by observing the effect of the process on the surface dynamically, and after the etch process has been completed. Monitoring of the layered structures during etching can provide a real time measure of the amount of material remaining in the layer being etched, and provide tight process control.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Pages819-824
Number of pages6
ISBN (Print)1558991743
StatePublished - Jan 1 1993
EventBeam Solid Interactions: Fundamentals and Applications - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
Volume279
ISSN (Print)0272-9172

Other

OtherBeam Solid Interactions: Fundamentals and Applications
CityBoston, MA, USA
Period11/30/9212/4/92

Fingerprint

Electron cyclotron resonance
Spectroscopic ellipsometry
Plasma etching
Etching
Semiconductor materials
Ellipsometry
Process control
Silicon
Wavelength
Monitoring
Gases
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Nafis, S., Ianno, N. J., Snyder, P. G., Woollam, J. A., & Blaine, J. (1993). In situ studies of electron cyclotron resonance plasma etching of semiconductors by spectroscopic ellipsometry. In Materials Research Society Symposium Proceedings (pp. 819-824). (Materials Research Society Symposium Proceedings; Vol. 279). Publ by Materials Research Society.

In situ studies of electron cyclotron resonance plasma etching of semiconductors by spectroscopic ellipsometry. / Nafis, S.; Ianno, N. J.; Snyder, Paul G.; Woollam, John A.; Blaine, Johs.

Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 819-824 (Materials Research Society Symposium Proceedings; Vol. 279).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Nafis, S, Ianno, NJ, Snyder, PG, Woollam, JA & Blaine, J 1993, In situ studies of electron cyclotron resonance plasma etching of semiconductors by spectroscopic ellipsometry. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 279, Publ by Materials Research Society, pp. 819-824, Beam Solid Interactions: Fundamentals and Applications, Boston, MA, USA, 11/30/92.
Nafis S, Ianno NJ, Snyder PG, Woollam JA, Blaine J. In situ studies of electron cyclotron resonance plasma etching of semiconductors by spectroscopic ellipsometry. In Materials Research Society Symposium Proceedings. Publ by Materials Research Society. 1993. p. 819-824. (Materials Research Society Symposium Proceedings).
Nafis, S. ; Ianno, N. J. ; Snyder, Paul G. ; Woollam, John A. ; Blaine, Johs. / In situ studies of electron cyclotron resonance plasma etching of semiconductors by spectroscopic ellipsometry. Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. pp. 819-824 (Materials Research Society Symposium Proceedings).
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