In-situ spectroscopic ellipsometry of HgCdTe

J. D. Benson, A. B. Cornfeld, M. Martinka, K. M. Singley, Z. Derzko, P. J. Shorten, J. H. Dinan, P. R. Boyd, F. C. Wolfgram, B. Johs, P. He, John A Woollam

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

An in-situ spectroscopic ellipsometer has been equipped on a molecular beam epitaxy system to improve control of HgCdTe growth. Using this device, in-situ analysis of composition, growth rate, and surface cleanliness were monitored. A real time model which determined the compositional profile was used. The ellipsometer was employed to give in-situ real time control of the growth process.

Original languageEnglish (US)
Pages (from-to)1406-1410
Number of pages5
JournalJournal of Electronic Materials
Volume25
Issue number8
DOIs
StatePublished - Jan 1 1996

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Spectroscopic ellipsometry
ellipsometry
ellipsometers
Real time control
Molecular beam epitaxy
cleanliness
molecular beam epitaxy
Chemical analysis
profiles

Keywords

  • Molecular beam epitaxy
  • Spectroscopic ellipsometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Benson, J. D., Cornfeld, A. B., Martinka, M., Singley, K. M., Derzko, Z., Shorten, P. J., ... Woollam, J. A. (1996). In-situ spectroscopic ellipsometry of HgCdTe. Journal of Electronic Materials, 25(8), 1406-1410. https://doi.org/10.1007/BF02655042

In-situ spectroscopic ellipsometry of HgCdTe. / Benson, J. D.; Cornfeld, A. B.; Martinka, M.; Singley, K. M.; Derzko, Z.; Shorten, P. J.; Dinan, J. H.; Boyd, P. R.; Wolfgram, F. C.; Johs, B.; He, P.; Woollam, John A.

In: Journal of Electronic Materials, Vol. 25, No. 8, 01.01.1996, p. 1406-1410.

Research output: Contribution to journalArticle

Benson, JD, Cornfeld, AB, Martinka, M, Singley, KM, Derzko, Z, Shorten, PJ, Dinan, JH, Boyd, PR, Wolfgram, FC, Johs, B, He, P & Woollam, JA 1996, 'In-situ spectroscopic ellipsometry of HgCdTe', Journal of Electronic Materials, vol. 25, no. 8, pp. 1406-1410. https://doi.org/10.1007/BF02655042
Benson JD, Cornfeld AB, Martinka M, Singley KM, Derzko Z, Shorten PJ et al. In-situ spectroscopic ellipsometry of HgCdTe. Journal of Electronic Materials. 1996 Jan 1;25(8):1406-1410. https://doi.org/10.1007/BF02655042
Benson, J. D. ; Cornfeld, A. B. ; Martinka, M. ; Singley, K. M. ; Derzko, Z. ; Shorten, P. J. ; Dinan, J. H. ; Boyd, P. R. ; Wolfgram, F. C. ; Johs, B. ; He, P. ; Woollam, John A. / In-situ spectroscopic ellipsometry of HgCdTe. In: Journal of Electronic Materials. 1996 ; Vol. 25, No. 8. pp. 1406-1410.
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