In-situ monitoring of the p- and n-type doping in AlGaInP

C. Krahmer, A. Behres, M. Schubert, K. Streubel

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigated the effect of Mg p- and Te/Si n-type doping on the in-situ reflectance anisotropy (RAS) spectra for the material system AlGaInP. All results have been compared to ex-situ performed Hall abd SIMS measurements. RAS intensities of Mg-doped AlInP first increase with increasing Mg-flux and then decrease even below the level of the undoped spectra. We explain by the effect, that beyond a critical Mg-flux the excess Mg remains on the surface and causes roughening of the surface and decreasing of the RAS intensities. For the n-type dopants we found a very different impact on the RAS data for Te doping than for Si doping. The RAS intensities from the Si-doped layers show a linear dependence versus the logarithm of the free carrier concentration. The RA spectra of Te-doped samples show a significant change in the shape of the spectra, which is related to surfactant effect of tellurium accumulating on the surface. Besides this a clear dependence of the RA-features to the free carrier concentration was found.

Original languageEnglish (US)
Pages (from-to)4727-4730
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
StatePublished - Nov 15 2008

Fingerprint

Anisotropy
Doping (additives)
reflectance
anisotropy
Monitoring
Carrier concentration
Tellurium
Fluxes
tellurium
Secondary ion mass spectrometry
logarithms
Surface-Active Agents
secondary ion mass spectrometry
Surface active agents
surfactants
causes

Keywords

  • A1. Doping
  • A1. Reflectance anisotropy spectroscopy
  • A3. Metalorganic vapor phase epitaxy
  • B1. AlGaInP
  • B2. Semiconducting quaternary alloys

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

In-situ monitoring of the p- and n-type doping in AlGaInP. / Krahmer, C.; Behres, A.; Schubert, M.; Streubel, K.

In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 4727-4730.

Research output: Contribution to journalArticle

Krahmer, C. ; Behres, A. ; Schubert, M. ; Streubel, K. / In-situ monitoring of the p- and n-type doping in AlGaInP. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 23. pp. 4727-4730.
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N2 - We investigated the effect of Mg p- and Te/Si n-type doping on the in-situ reflectance anisotropy (RAS) spectra for the material system AlGaInP. All results have been compared to ex-situ performed Hall abd SIMS measurements. RAS intensities of Mg-doped AlInP first increase with increasing Mg-flux and then decrease even below the level of the undoped spectra. We explain by the effect, that beyond a critical Mg-flux the excess Mg remains on the surface and causes roughening of the surface and decreasing of the RAS intensities. For the n-type dopants we found a very different impact on the RAS data for Te doping than for Si doping. The RAS intensities from the Si-doped layers show a linear dependence versus the logarithm of the free carrier concentration. The RA spectra of Te-doped samples show a significant change in the shape of the spectra, which is related to surfactant effect of tellurium accumulating on the surface. Besides this a clear dependence of the RA-features to the free carrier concentration was found.

AB - We investigated the effect of Mg p- and Te/Si n-type doping on the in-situ reflectance anisotropy (RAS) spectra for the material system AlGaInP. All results have been compared to ex-situ performed Hall abd SIMS measurements. RAS intensities of Mg-doped AlInP first increase with increasing Mg-flux and then decrease even below the level of the undoped spectra. We explain by the effect, that beyond a critical Mg-flux the excess Mg remains on the surface and causes roughening of the surface and decreasing of the RAS intensities. For the n-type dopants we found a very different impact on the RAS data for Te doping than for Si doping. The RAS intensities from the Si-doped layers show a linear dependence versus the logarithm of the free carrier concentration. The RA spectra of Te-doped samples show a significant change in the shape of the spectra, which is related to surfactant effect of tellurium accumulating on the surface. Besides this a clear dependence of the RA-features to the free carrier concentration was found.

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KW - B2. Semiconducting quaternary alloys

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