In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

C. Krahmer, M. Philippens, Mathias Schubert, K. Streubel O

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.

Original languageEnglish (US)
Pages (from-to)655-658
Number of pages4
JournalPhysica Status Solidi C: Conferences
Volume3
Issue number3
DOIs
StatePublished - May 8 2006
Event32nd International Symposium on Compound Semiconductors, ISCS-2005 - Rust, Germany
Duration: Sep 18 2005Sep 22 2005

Fingerprint

reactors
wafers
reflectance
anisotropy
spectroscopy
optoelectronic devices
misalignment
aluminum gallium arsenides
temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor. / Krahmer, C.; Philippens, M.; Schubert, Mathias; Streubel O, K.

In: Physica Status Solidi C: Conferences, Vol. 3, No. 3, 08.05.2006, p. 655-658.

Research output: Contribution to journalConference article

@article{7c7a2afd820f4bb182d412f5511498fb,
title = "In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor",
abstract = "We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.",
author = "C. Krahmer and M. Philippens and Mathias Schubert and {Streubel O}, K.",
year = "2006",
month = "5",
day = "8",
doi = "10.1002/pssc.200564181",
language = "English (US)",
volume = "3",
pages = "655--658",
journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",
issn = "1862-6351",
publisher = "Wiley-VCH Verlag",
number = "3",

}

TY - JOUR

T1 - In-situ monitoring of MOVPE growth with reflectance anisotropy spectroscopy in an industrial used multi wafer reactor

AU - Krahmer, C.

AU - Philippens, M.

AU - Schubert, Mathias

AU - Streubel O, K.

PY - 2006/5/8

Y1 - 2006/5/8

N2 - We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.

AB - We investigated structures grown in an industrial used multi wafer MOVPE reactor, in order to understand the influence of the growth parameters on the RAS spectra. We investigated the effect of p- and ntype doping on the RAS spectra of different materials important for optoelectronic devices such as AlGaAs and InGaAlP. Furthermore, the effect of ordering in GaInP layers on the RAS spectra has been studied. Growth parameters such as substrate misorientation, growth temperature and doping level have been varied in order to study different degrees of ordering in AlGaInP.

UR - http://www.scopus.com/inward/record.url?scp=33646166539&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646166539&partnerID=8YFLogxK

U2 - 10.1002/pssc.200564181

DO - 10.1002/pssc.200564181

M3 - Conference article

VL - 3

SP - 655

EP - 658

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

SN - 1862-6351

IS - 3

ER -