In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon

N. J. Ianno, S. Ahmer, S. Pittal, John A. Woollam

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

Original languageEnglish (US)
Pages (from-to)535-540
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume349
StatePublished - Dec 1 1994
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994

Fingerprint

Electron cyclotron resonance
electron cyclotron resonance
Etching
Carbon
etching
Diamond like carbon films
Monitoring
carbon
Ellipsometry
Energy gap
Flow rate
oxygen plasma
Oxygen
Plasmas
Wavelength
ellipsometry
flow velocity
diamonds
output
wavelengths

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon. / Ianno, N. J.; Ahmer, S.; Pittal, S.; Woollam, John A.

In: Materials Research Society Symposium - Proceedings, Vol. 349, 01.12.1994, p. 535-540.

Research output: Contribution to journalConference article

@article{89ba01265be842e2b27e539dacf3db71,
title = "In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon",
abstract = "The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.",
author = "Ianno, {N. J.} and S. Ahmer and S. Pittal and Woollam, {John A.}",
year = "1994",
month = "12",
day = "1",
language = "English (US)",
volume = "349",
pages = "535--540",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

TY - JOUR

T1 - In-situ ellipsometric monitoring of the electron cyclotron resonance etching of dianmond-like carbon

AU - Ianno, N. J.

AU - Ahmer, S.

AU - Pittal, S.

AU - Woollam, John A.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

AB - The electron cyclotron resonance (ECR) etching of diamond-like carbon films in an oxygen plasma has been studied. The input variables were flow rate, pressure, power, and bias, while the output parameters were etch rate, and uniformity. In-situ ellipsometry, performed at 44 wavelengths simultaneously, was employed to monitor the etch process in real time. We will show that DLC films can be etched without an applied bias, but the application of an rf induced dc bias greatly enhances etch uniformity. Further, the etch rate is a strong function of the bandgap of the DLC film.

UR - http://www.scopus.com/inward/record.url?scp=0028740859&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028740859&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028740859

VL - 349

SP - 535

EP - 540

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -