Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor

Hongzhi Chen, Ning Xi, King W.C. Lai, Carmen K.M. Fung, Ruiguo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Carbon nanotube (CNT) is a novel one dimensional (1D) material that has unique electrical and optoelectronic properties. Photo-sensors using CNT can sense infrared signals by using Schottky barriers between metal and nanotube, which are able to separate photo-generated electron-hole pairs in order to generate photocurrent or photovoltage for detection and quantification. It has been demonstrated that both asymmetric metal structure and electrical field can improve the performance of the sensors by manipulating the energy alignment between metal and CNT. However, it is not clear how to optimize the design of the CNT photo-sensors. An asymmetric multi-gate field effect transistor based infrared detector was fabricated, integrating with asymmetric metal structure (Au-CNT-Al) and multiple gates, which allow for controlling the doping level at source, drain and channel independently. It was found that dark current was suppressed and photocurrent was enhanced by applying negative gate voltages, thus improving sensor's performance. The CNT detector exhibited similar photo-response when modulating the doping level of CNT segments at source, drain and bulk. We ascribe this to the charge distribution that has a long tail extending over the whole tube.

Original languageEnglish (US)
Title of host publication2010 10th IEEE Conference on Nanotechnology, NANO 2010
Pages727-731
Number of pages5
DOIs
StatePublished - Dec 1 2010
Event2010 10th IEEE Conference on Nanotechnology, NANO 2010 - Ilsan, Gyeonggi-Do, Korea, Republic of
Duration: Aug 17 2010Aug 20 2010

Publication series

Name2010 10th IEEE Conference on Nanotechnology, NANO 2010

Other

Other2010 10th IEEE Conference on Nanotechnology, NANO 2010
CountryKorea, Republic of
CityIlsan, Gyeonggi-Do
Period8/17/108/20/10

Fingerprint

field effect transistors
carbon nanotubes
sensors
metals
photocurrents
photovoltages
infrared detectors
dark current
charge distribution
nanotubes
electrical properties
alignment
tubes
detectors
electric potential
energy

Keywords

  • Carbon nanotube
  • Field-effect transistor
  • Infrared detector
  • Optoelectronics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Chen, H., Xi, N., Lai, K. W. C., Fung, C. K. M., & Yang, R. (2010). Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010 (pp. 727-731). [5697813] (2010 10th IEEE Conference on Nanotechnology, NANO 2010). https://doi.org/10.1109/NANO.2010.5697813

Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor. / Chen, Hongzhi; Xi, Ning; Lai, King W.C.; Fung, Carmen K.M.; Yang, Ruiguo.

2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. p. 727-731 5697813 (2010 10th IEEE Conference on Nanotechnology, NANO 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, H, Xi, N, Lai, KWC, Fung, CKM & Yang, R 2010, Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor. in 2010 10th IEEE Conference on Nanotechnology, NANO 2010., 5697813, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, pp. 727-731, 2010 10th IEEE Conference on Nanotechnology, NANO 2010, Ilsan, Gyeonggi-Do, Korea, Republic of, 8/17/10. https://doi.org/10.1109/NANO.2010.5697813
Chen H, Xi N, Lai KWC, Fung CKM, Yang R. Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor. In 2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. p. 727-731. 5697813. (2010 10th IEEE Conference on Nanotechnology, NANO 2010). https://doi.org/10.1109/NANO.2010.5697813
Chen, Hongzhi ; Xi, Ning ; Lai, King W.C. ; Fung, Carmen K.M. ; Yang, Ruiguo. / Improving the detectability of CNT based infrared sensors using multi-gate field effect transistor. 2010 10th IEEE Conference on Nanotechnology, NANO 2010. 2010. pp. 727-731 (2010 10th IEEE Conference on Nanotechnology, NANO 2010).
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