Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs

H. F. Wei, N. M. Kalkhoran, F. Namavar, J. E. Chung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

This work demonstrates a well-controlled technique of channel defect engineering, by implanting Ge into the SOI device channel to act as a minority carrier lifetime killer in order to reduce the parasitic bipolar effect and thus improve the source-to-drain breakdown voltage. The Ge-implant also serves the dual purpose of creating Si structural defects in the back interface region which reduce the back channel off-state leakage.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages739-742
Number of pages4
ISBN (Print)0780314506
StatePublished - Dec 1 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 5 1993Dec 8 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period12/5/9312/8/93

Fingerprint

Electric breakdown
Defects
Carrier lifetime

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Wei, H. F., Kalkhoran, N. M., Namavar, F., & Chung, J. E. (1993). Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 739-742). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.

Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs. / Wei, H. F.; Kalkhoran, N. M.; Namavar, F.; Chung, J. E.

Technical Digest - International Electron Devices Meeting. ed. / Anon. Publ by IEEE, 1993. p. 739-742 (Technical Digest - International Electron Devices Meeting).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Wei, HF, Kalkhoran, NM, Namavar, F & Chung, JE 1993, Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs. in Anon (ed.), Technical Digest - International Electron Devices Meeting. Technical Digest - International Electron Devices Meeting, Publ by IEEE, pp. 739-742, Proceedings of the 1993 IEEE International Electron Devices Meeting, Washington, DC, USA, 12/5/93.
Wei HF, Kalkhoran NM, Namavar F, Chung JE. Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs. In Anon, editor, Technical Digest - International Electron Devices Meeting. Publ by IEEE. 1993. p. 739-742. (Technical Digest - International Electron Devices Meeting).
Wei, H. F. ; Kalkhoran, N. M. ; Namavar, F. ; Chung, J. E. / Improvement of breakdown voltage and off-state leakage in Ge-implanted SOI n-MOSFETs. Technical Digest - International Electron Devices Meeting. editor / Anon. Publ by IEEE, 1993. pp. 739-742 (Technical Digest - International Electron Devices Meeting).
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