Hole diffusion profile in a p- p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry

T. Hofmann, C. M. Herzinger, T. E. Tiwald, John A Woollam, Mathias Schubert

Research output: Contribution to journalArticle

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Abstract

Noninvasive optical measurement of hole diffusion profiles in p- p + silicon homojunction is reported by ellipsometry in the terahertz (0.2-1.5 THz) and midinfrared (9-50 THz) spectral regions. In the terahertz region a surface-guided wave resonance with transverse-electrical polarization is observed at the boundary of the p- p+ homojunction, and which is found to be extremely sensitive to the low-doped p -type carrier concentration as well as to the hole diffusion profile within the p- p+ homojunction. Effective mass approximations allow determination of homojunction hole concentrations as p=2.9× 1015 cm-3, p + =5.6× 1018 cm-3, and diffusion time constant Dt=7.7× 10-3 μ m2, in agreement with previous electrical investigations.

Original languageEnglish (US)
Article number032102
JournalApplied Physics Letters
Volume95
Issue number3
DOIs
StatePublished - Jul 31 2009

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homojunctions
ellipsometry
silicon
profiles
optical measurement
time constant
polarization
approximation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hole diffusion profile in a p- p+ silicon homojunction determined by terahertz and midinfrared spectroscopic ellipsometry. / Hofmann, T.; Herzinger, C. M.; Tiwald, T. E.; Woollam, John A; Schubert, Mathias.

In: Applied Physics Letters, Vol. 95, No. 3, 032102, 31.07.2009.

Research output: Contribution to journalArticle

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