Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

T. Hofmann, A. Boosalis, P. Kühne, C. M. Herzinger, J. A. Woollam, D. K. Gaskill, J. L. Tedesco, M. Schubert

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

We report noncontact, optical determination of free-charge carrier mobility, sheet density, and resistivity parameters in epitaxial graphene at room temperature using terahertz and midinfrared ellipsometry and optical-Hall effect measurements. The graphene layers are grown on Si- and C-terminated semi-insulating 6H silicon carbide polar surfaces. Data analysis using classical Drude functions and multilayer modeling render the existence of a p -type channel with different sheet densities and effective mass parameters for the two polar surfaces. The optically obtained parameters are in excellent agreement with results from electrical Hall effect measurements.

Original languageEnglish (US)
Article number041906
JournalApplied Physics Letters
Volume98
Issue number4
DOIs
StatePublished - Jan 24 2011

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ellipsometry
Hall effect
graphene
conductivity
carrier mobility
silicon carbides
charge carriers
electrical resistivity
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry. / Hofmann, T.; Boosalis, A.; Kühne, P.; Herzinger, C. M.; Woollam, J. A.; Gaskill, D. K.; Tedesco, J. L.; Schubert, M.

In: Applied Physics Letters, Vol. 98, No. 4, 041906, 24.01.2011.

Research output: Contribution to journalArticle

Hofmann, T. ; Boosalis, A. ; Kühne, P. ; Herzinger, C. M. ; Woollam, J. A. ; Gaskill, D. K. ; Tedesco, J. L. ; Schubert, M. / Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry. In: Applied Physics Letters. 2011 ; Vol. 98, No. 4.
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