High frequency capacitance-voltage and conductance-voltage characteristics of d.c. sputter deposited a-carbon/silicon MIS structures

A. Azim Khan, John A Woollam, Y. Chung

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Dark and illuminated C-V and G-V characteristics of A1/a-carbon/silicon MIS structures have been measured in the frequency range of 10 kHz to 10 MHz. The a-carbon passivating layer is prepared by d.c. sputtering of a graphite target in Ar gas. There is no evidence of Fermi level pinning, and surface carrier inversion is clearly demonstrated. Electrical instabilities are noted and briefly discussed. The high frequency electrical behavior seems to be dominated by states in the dielectric rather than states at the interface. a-carbon appears to be a promising dielectric material for use in silicon solid state electronics.

Original languageEnglish (US)
Pages (from-to)385-391
Number of pages7
JournalSolid State Electronics
Volume27
Issue number4
DOIs
StatePublished - Jan 1 1984

Fingerprint

Management information systems
MIS (semiconductors)
Silicon
Capacitance
Carbon
capacitance
carbon
Electric potential
electric potential
silicon
Graphite
Electronic states
Fermi level
Sputtering
graphite
Gases
sputtering
frequency ranges
inversions
solid state

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

High frequency capacitance-voltage and conductance-voltage characteristics of d.c. sputter deposited a-carbon/silicon MIS structures. / Khan, A. Azim; Woollam, John A; Chung, Y.

In: Solid State Electronics, Vol. 27, No. 4, 01.01.1984, p. 385-391.

Research output: Contribution to journalArticle

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