Heteroepitaxial Si-ZrO2-Si by MOCVD

Anton C. Greenwald, Nader M. Kalkhoran, Fereydoon Namavar, Alain E. Kaloyeros, Ioannis Stathakos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The objective of this research was to demonstrate heteroepitaxial growth of yttria stabilized cubic zirconia on single crystal silicon substrates by chemical vapour deposition (CVD) using metalorganic source materials. We succeeded in depositing extremely smooth, well aligned films of zirconia on silicon substrates, both the 〈100〉 and 〈111〉 orientations, without an oxide interfacial layer. Experimental variables investigated included varying zirconia source materials, substrate temperatures, oxygen concentration, gas flow rates, yttria doping, substrate orientation, and cobalt-silicide as an oxygen diffusion barrier. ZrO2 films were predominantly tetragonal when deposited in the absence of oxygen while cubic phase material could be put down at 750°C with oxygen background. Films deposited from TMHD zirconium contained no measurable carbon contamination. Deposits from trifluoro-acetylacetonate Zr contained small amounts of fluorine, even in the presence of water vapor, and some carbon when hydrogen was used as a diluent gas.

Original languageEnglish (US)
Title of host publicationMetal-Organic Chemical Vapor Deposition of Electronic Ceramics
EditorsSeshu B. Desu, David B. Beach, Bruce W. Wessels, Suleyman Gokoglu
PublisherPubl by Materials Research Society
Pages123-128
Number of pages6
ISBN (Print)1558992340
StatePublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
Volume335
ISSN (Print)0272-9172

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

Fingerprint

Metallorganic chemical vapor deposition
Zirconia
Oxygen
Yttrium oxide
Silicon
Substrates
Carbon
Diffusion barriers
Fluorine
Steam
Cobalt
Epitaxial growth
Zirconium
Oxides
Water vapor
Flow of gases
Hydrogen
Contamination
Deposits
Gases

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Greenwald, A. C., Kalkhoran, N. M., Namavar, F., Kaloyeros, A. E., & Stathakos, I. (1994). Heteroepitaxial Si-ZrO2-Si by MOCVD. In S. B. Desu, D. B. Beach, B. W. Wessels, & S. Gokoglu (Eds.), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics (pp. 123-128). (Materials Research Society Symposium Proceedings; Vol. 335). Publ by Materials Research Society.

Heteroepitaxial Si-ZrO2-Si by MOCVD. / Greenwald, Anton C.; Kalkhoran, Nader M.; Namavar, Fereydoon; Kaloyeros, Alain E.; Stathakos, Ioannis.

Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. ed. / Seshu B. Desu; David B. Beach; Bruce W. Wessels; Suleyman Gokoglu. Publ by Materials Research Society, 1994. p. 123-128 (Materials Research Society Symposium Proceedings; Vol. 335).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Greenwald, AC, Kalkhoran, NM, Namavar, F, Kaloyeros, AE & Stathakos, I 1994, Heteroepitaxial Si-ZrO2-Si by MOCVD. in SB Desu, DB Beach, BW Wessels & S Gokoglu (eds), Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. Materials Research Society Symposium Proceedings, vol. 335, Publ by Materials Research Society, pp. 123-128, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.
Greenwald AC, Kalkhoran NM, Namavar F, Kaloyeros AE, Stathakos I. Heteroepitaxial Si-ZrO2-Si by MOCVD. In Desu SB, Beach DB, Wessels BW, Gokoglu S, editors, Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. Publ by Materials Research Society. 1994. p. 123-128. (Materials Research Society Symposium Proceedings).
Greenwald, Anton C. ; Kalkhoran, Nader M. ; Namavar, Fereydoon ; Kaloyeros, Alain E. ; Stathakos, Ioannis. / Heteroepitaxial Si-ZrO2-Si by MOCVD. Metal-Organic Chemical Vapor Deposition of Electronic Ceramics. editor / Seshu B. Desu ; David B. Beach ; Bruce W. Wessels ; Suleyman Gokoglu. Publ by Materials Research Society, 1994. pp. 123-128 (Materials Research Society Symposium Proceedings).
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N2 - The objective of this research was to demonstrate heteroepitaxial growth of yttria stabilized cubic zirconia on single crystal silicon substrates by chemical vapour deposition (CVD) using metalorganic source materials. We succeeded in depositing extremely smooth, well aligned films of zirconia on silicon substrates, both the 〈100〉 and 〈111〉 orientations, without an oxide interfacial layer. Experimental variables investigated included varying zirconia source materials, substrate temperatures, oxygen concentration, gas flow rates, yttria doping, substrate orientation, and cobalt-silicide as an oxygen diffusion barrier. ZrO2 films were predominantly tetragonal when deposited in the absence of oxygen while cubic phase material could be put down at 750°C with oxygen background. Films deposited from TMHD zirconium contained no measurable carbon contamination. Deposits from trifluoro-acetylacetonate Zr contained small amounts of fluorine, even in the presence of water vapor, and some carbon when hydrogen was used as a diluent gas.

AB - The objective of this research was to demonstrate heteroepitaxial growth of yttria stabilized cubic zirconia on single crystal silicon substrates by chemical vapour deposition (CVD) using metalorganic source materials. We succeeded in depositing extremely smooth, well aligned films of zirconia on silicon substrates, both the 〈100〉 and 〈111〉 orientations, without an oxide interfacial layer. Experimental variables investigated included varying zirconia source materials, substrate temperatures, oxygen concentration, gas flow rates, yttria doping, substrate orientation, and cobalt-silicide as an oxygen diffusion barrier. ZrO2 films were predominantly tetragonal when deposited in the absence of oxygen while cubic phase material could be put down at 750°C with oxygen background. Films deposited from TMHD zirconium contained no measurable carbon contamination. Deposits from trifluoro-acetylacetonate Zr contained small amounts of fluorine, even in the presence of water vapor, and some carbon when hydrogen was used as a diluent gas.

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