Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering

Yun Tong, Yuqiao Guo, Kejun Mu, Huan Shan, Jun Dai, Yi Liu, Zhe Sun, Aidi Zhao, Xiao Cheng Zeng, Changzheng Wu, Yi Xie

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the best nonartificial low-dimensional building blocks for developing spintronic nanodevices. However, the lack of spin polarization in the vicinity of the Fermi surface and local magnetic moment in pristine TMDs has greatly hampered the exploitation of magnetotransport properties. Herein, a half-metallic structure of TMDs is successfully developed by a simple chemical defect-engineering strategy. Dual native defects decorate titanium diselenides with the coexistence of metal-Ti-atom incorporation and Se-anion defects, resulting in a high-spin-polarized current and local magnetic moment of 2D Ti-based TMDs toward half-metallic room-temperature ferromagnetism character. Arising from spin-polarization transport, the as-obtained T-TiSe1.8 nanosheets exhibit a large negative magnetoresistance phenomenon with a value of −40% (5T, 10 K), representing one of the highest negative magnetoresistance effects among TMDs. It is anticipated that this dual regulation strategy will be a powerful tool for optimizing the intrinsic physical properties of TMD systems.

Original languageEnglish (US)
Article number1703123
JournalAdvanced Materials
Volume29
Issue number40
DOIs
StatePublished - Oct 25 2017

Fingerprint

Nanosheets
Transition metals
Defects
Spin polarization
Magnetoresistance
Magnetic moments
Galvanomagnetic effects
Magnetoelectronics
Fermi surface
Ferromagnetism
Titanium
Anions
Negative ions
Physical properties
Metals
Atoms

Keywords

  • dual defects
  • ferromagnetism
  • half-metal
  • spin polarization
  • two dimensional

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering. / Tong, Yun; Guo, Yuqiao; Mu, Kejun; Shan, Huan; Dai, Jun; Liu, Yi; Sun, Zhe; Zhao, Aidi; Zeng, Xiao Cheng; Wu, Changzheng; Xie, Yi.

In: Advanced Materials, Vol. 29, No. 40, 1703123, 25.10.2017.

Research output: Contribution to journalArticle

Tong, Y, Guo, Y, Mu, K, Shan, H, Dai, J, Liu, Y, Sun, Z, Zhao, A, Zeng, XC, Wu, C & Xie, Y 2017, 'Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering', Advanced Materials, vol. 29, no. 40, 1703123. https://doi.org/10.1002/adma.201703123
Tong, Yun ; Guo, Yuqiao ; Mu, Kejun ; Shan, Huan ; Dai, Jun ; Liu, Yi ; Sun, Zhe ; Zhao, Aidi ; Zeng, Xiao Cheng ; Wu, Changzheng ; Xie, Yi. / Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering. In: Advanced Materials. 2017 ; Vol. 29, No. 40.
@article{931ff0cd038844859eca7bf235be0d0d,
title = "Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering",
abstract = "Two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the best nonartificial low-dimensional building blocks for developing spintronic nanodevices. However, the lack of spin polarization in the vicinity of the Fermi surface and local magnetic moment in pristine TMDs has greatly hampered the exploitation of magnetotransport properties. Herein, a half-metallic structure of TMDs is successfully developed by a simple chemical defect-engineering strategy. Dual native defects decorate titanium diselenides with the coexistence of metal-Ti-atom incorporation and Se-anion defects, resulting in a high-spin-polarized current and local magnetic moment of 2D Ti-based TMDs toward half-metallic room-temperature ferromagnetism character. Arising from spin-polarization transport, the as-obtained T-TiSe1.8 nanosheets exhibit a large negative magnetoresistance phenomenon with a value of −40{\%} (5T, 10 K), representing one of the highest negative magnetoresistance effects among TMDs. It is anticipated that this dual regulation strategy will be a powerful tool for optimizing the intrinsic physical properties of TMD systems.",
keywords = "dual defects, ferromagnetism, half-metal, spin polarization, two dimensional",
author = "Yun Tong and Yuqiao Guo and Kejun Mu and Huan Shan and Jun Dai and Yi Liu and Zhe Sun and Aidi Zhao and Zeng, {Xiao Cheng} and Changzheng Wu and Yi Xie",
year = "2017",
month = "10",
day = "25",
doi = "10.1002/adma.201703123",
language = "English (US)",
volume = "29",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "40",

}

TY - JOUR

T1 - Half-Metallic Behavior in 2D Transition Metal Dichalcogenides Nanosheets by Dual-Native-Defects Engineering

AU - Tong, Yun

AU - Guo, Yuqiao

AU - Mu, Kejun

AU - Shan, Huan

AU - Dai, Jun

AU - Liu, Yi

AU - Sun, Zhe

AU - Zhao, Aidi

AU - Zeng, Xiao Cheng

AU - Wu, Changzheng

AU - Xie, Yi

PY - 2017/10/25

Y1 - 2017/10/25

N2 - Two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the best nonartificial low-dimensional building blocks for developing spintronic nanodevices. However, the lack of spin polarization in the vicinity of the Fermi surface and local magnetic moment in pristine TMDs has greatly hampered the exploitation of magnetotransport properties. Herein, a half-metallic structure of TMDs is successfully developed by a simple chemical defect-engineering strategy. Dual native defects decorate titanium diselenides with the coexistence of metal-Ti-atom incorporation and Se-anion defects, resulting in a high-spin-polarized current and local magnetic moment of 2D Ti-based TMDs toward half-metallic room-temperature ferromagnetism character. Arising from spin-polarization transport, the as-obtained T-TiSe1.8 nanosheets exhibit a large negative magnetoresistance phenomenon with a value of −40% (5T, 10 K), representing one of the highest negative magnetoresistance effects among TMDs. It is anticipated that this dual regulation strategy will be a powerful tool for optimizing the intrinsic physical properties of TMD systems.

AB - Two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the best nonartificial low-dimensional building blocks for developing spintronic nanodevices. However, the lack of spin polarization in the vicinity of the Fermi surface and local magnetic moment in pristine TMDs has greatly hampered the exploitation of magnetotransport properties. Herein, a half-metallic structure of TMDs is successfully developed by a simple chemical defect-engineering strategy. Dual native defects decorate titanium diselenides with the coexistence of metal-Ti-atom incorporation and Se-anion defects, resulting in a high-spin-polarized current and local magnetic moment of 2D Ti-based TMDs toward half-metallic room-temperature ferromagnetism character. Arising from spin-polarization transport, the as-obtained T-TiSe1.8 nanosheets exhibit a large negative magnetoresistance phenomenon with a value of −40% (5T, 10 K), representing one of the highest negative magnetoresistance effects among TMDs. It is anticipated that this dual regulation strategy will be a powerful tool for optimizing the intrinsic physical properties of TMD systems.

KW - dual defects

KW - ferromagnetism

KW - half-metal

KW - spin polarization

KW - two dimensional

UR - http://www.scopus.com/inward/record.url?scp=85028660356&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85028660356&partnerID=8YFLogxK

U2 - 10.1002/adma.201703123

DO - 10.1002/adma.201703123

M3 - Article

C2 - 28861927

AN - SCOPUS:85028660356

VL - 29

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 40

M1 - 1703123

ER -