Growth of thin films of the defect perovskite LaCuO3-δ by Pulsed Laser Deposition

A. Gupta, B. W. Hussey, A. M. Guloy, T. M. Shaw, R. F. Saraf, J. F. Bringley, B. A. Scott

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Abstract

Oriented thin films of the defect perovskite LaCuO3-δ (LCO) have been grown on (100) SrTiO3 substrates by pulsed laser deposition. The orthorhombic, oxygen-deficient La2Cu2O5 (δ = 0.5) phase, which is the end-member of the perovskite series, is formed at a growth temperature of 700°C under 200 mTorr background O2 pressure. With additional oxygen uptake during cooldown, the orthorhombic phase can be easily converted to the monoclinic modification (δ ≤ 0.4). The more highly oxygenated tetragonal phase (δ ≤ 0.2) is, however, not obtained for background O2 pressures up to 760 Torr. Partial conversion to the tetragonal phase has been achieved by postannealing the films at 600-650°C under high oxygen pressure (450 bar). From resistivity measurements, a distinct insulator-metal transition is observed in going from the orthorhombic to the monoclinic structure, with postannealed films containing the mixed tetragonal and monoclinic phases showing the lowest resistivity. However, no evidence of superconductivity has been detected in any of the films down to 5 K.

Original languageEnglish (US)
Pages (from-to)202-206
Number of pages5
JournalJournal of Solid State Chemistry
Volume108
Issue number1
DOIs
Publication statusPublished - Jan 1994

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Physical and Theoretical Chemistry
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Gupta, A., Hussey, B. W., Guloy, A. M., Shaw, T. M., Saraf, R. F., Bringley, J. F., & Scott, B. A. (1994). Growth of thin films of the defect perovskite LaCuO3-δ by Pulsed Laser Deposition. Journal of Solid State Chemistry, 108(1), 202-206. https://doi.org/10.1006/jssc.1994.1032