Growth of diamond by rf plasma-assisted chemical vapor deposition

Duane E. Meyer, Natale J. lanno, John A. Woollam

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, rf input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4.5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

Original languageEnglish (US)
Pages (from-to)1397-1403
Number of pages7
JournalJournal of Materials Research
Volume3
Issue number6
DOIs
StatePublished - Dec 1988

Fingerprint

Diamond
Quartz
Graphite
Chemical vapor deposition
Diamonds
Diamond deposits
Gases
diamonds
vapor deposition
Spectroscopy
Plasmas
Scanning electron microscopy
Boron nitride
deposits
Optical band gaps
Silicon
Substrates
Nickel
Absorption spectroscopy
Auger spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Growth of diamond by rf plasma-assisted chemical vapor deposition. / Meyer, Duane E.; lanno, Natale J.; Woollam, John A.

In: Journal of Materials Research, Vol. 3, No. 6, 12.1988, p. 1397-1403.

Research output: Contribution to journalArticle

Meyer, Duane E. ; lanno, Natale J. ; Woollam, John A. / Growth of diamond by rf plasma-assisted chemical vapor deposition. In: Journal of Materials Research. 1988 ; Vol. 3, No. 6. pp. 1397-1403.
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