GETTERING OF IMPURITIES DURING HIGH DOSE IMPLANTATION OF Al OR Cr INTO Si AND THE RESULTING EFFECT ON STRUCTURE AND COMPOSITION.

F. Namavar, J. I. Budnick, F. A. Otter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

This paper presents strong evidence for carbon and oxygen gettering during high dose implantation of Cr and Al into Si by implanted ions or Si atoms. Rutherford Backscattering (RBS) and Auger Electron Spectroscopy (AES) experiments of Cr and Al implanted Si samples in a diffusion pumped vacuum (DPV) system ( congruent 10** minus **6 Torr) clearly indicate that the incorporation of carbon or oxygen occurs preferentially and depends on the surface composition which is controlled by the dose of implantation and by sputtering. The implantation of Cr and Al in a DPV system ( congruent 10** minus **6 Torr) results in a large increase in the concentration and retention of implanted atoms compared to implantation in a UHV system ( congruent 10** minus **8 Torr). For implantation in a DPV system, the Cr distribution broadens up to a factor of two. For Al a bimodal or broadened distribution could be observed by nuclear resonance profiling (NRP).

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherMaterials Research Soc
Pages55-60
Number of pages6
ISBN (Print)0931837014
Publication statusPublished - Dec 1 1985

Publication series

NameMaterials Research Society Symposia Proceedings
Volume36
ISSN (Print)0272-9172

    Fingerprint

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Namavar, F., Budnick, J. I., & Otter, F. A. (1985). GETTERING OF IMPURITIES DURING HIGH DOSE IMPLANTATION OF Al OR Cr INTO Si AND THE RESULTING EFFECT ON STRUCTURE AND COMPOSITION. In Materials Research Society Symposia Proceedings (pp. 55-60). (Materials Research Society Symposia Proceedings; Vol. 36). Materials Research Soc.