Gate structure optimization of carbon nanotube transistor based infrared detector

Hongzhi Chen, Ning Xi, King W.C. Lai, Carmen Kar Man Fung, Ruiguo Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single wall carbon nanotube (SWCNT) is a promising one dimensional (1D) material to fabricate high performance infrared (IR) detectors owing to its unique electrical and physical properties. The 1D Schottky barrier between metal and CNT can separate the photon-generated electron-hole pairs so as to produce photocurrent for quantification and detection. However, the theory developed for the planar metal-semiconductor contact is not compatible with the 1D Schottky barrier within the CNT, thus the optimized structure for a CNT detector is unknown. Our understanding can be improved by using the capacitance-coupled electrostatic doping from a gate of a CNT transistor, which will find out the role of the CNT energy level. A standard back gate CNT transistor based photodetector was fabricated, which showed that positive gate voltages could improve the performance by widening the Schottky barriers. However, the back gate geometry will modulate two Schottky barriers simultaneously with applied bias, severely degrading the detector performance. In order to optimize gate structure for the CNT IR detector, we propose a detector integrated with three different gate structures: side gates for source and drain, and middle gates for the bulk of CNT. The side gates next to the source and drain control the carrier injection at the junctions independently, while the middle gates can block the fringing field from the other gates, and modulate the Fermi level of the CNT channel. We found that opposite gate voltages at source and drain terminals can optimize the performance of the detector by widening one barrier, but eliminating the other. The optimized structure can lead to a high performance nano-scale photon harvest device. This will pave the way for the CNT as a significant building block for future nano-optoelectronics.

Original languageEnglish (US)
Title of host publication2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
Pages289-292
Number of pages4
DOIs
StatePublished - Nov 29 2010
Event5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 - Xiamen, China
Duration: Jan 20 2010Jan 23 2010

Publication series

Name2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

Other

Other5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010
CountryChina
CityXiamen
Period1/20/101/23/10

Fingerprint

Infrared detectors
Carbon nanotubes
Transistors
Detectors
Photons
Electric potential
Photodetectors
Fermi level
Metals
Photocurrents
Optoelectronic devices
Electron energy levels
Electrostatics
Electric properties
Capacitance
Physical properties
Doping (additives)
Semiconductor materials
Geometry
Electrons

Keywords

  • Carbon nanotube (CNT)
  • Field effect transistor (FET)
  • Gate structure
  • Infrared (IR) detector

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Chen, H., Xi, N., Lai, K. W. C., Fung, C. K. M., & Yang, R. (2010). Gate structure optimization of carbon nanotube transistor based infrared detector. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010 (pp. 289-292). [5592213] (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). https://doi.org/10.1109/NEMS.2010.5592213

Gate structure optimization of carbon nanotube transistor based infrared detector. / Chen, Hongzhi; Xi, Ning; Lai, King W.C.; Fung, Carmen Kar Man; Yang, Ruiguo.

2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 289-292 5592213 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chen, H, Xi, N, Lai, KWC, Fung, CKM & Yang, R 2010, Gate structure optimization of carbon nanotube transistor based infrared detector. in 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010., 5592213, 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, pp. 289-292, 5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010, Xiamen, China, 1/20/10. https://doi.org/10.1109/NEMS.2010.5592213
Chen H, Xi N, Lai KWC, Fung CKM, Yang R. Gate structure optimization of carbon nanotube transistor based infrared detector. In 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. p. 289-292. 5592213. (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010). https://doi.org/10.1109/NEMS.2010.5592213
Chen, Hongzhi ; Xi, Ning ; Lai, King W.C. ; Fung, Carmen Kar Man ; Yang, Ruiguo. / Gate structure optimization of carbon nanotube transistor based infrared detector. 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010. 2010. pp. 289-292 (2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010).
@inproceedings{2144a69c5857432c9d4fd800b760297f,
title = "Gate structure optimization of carbon nanotube transistor based infrared detector",
abstract = "Single wall carbon nanotube (SWCNT) is a promising one dimensional (1D) material to fabricate high performance infrared (IR) detectors owing to its unique electrical and physical properties. The 1D Schottky barrier between metal and CNT can separate the photon-generated electron-hole pairs so as to produce photocurrent for quantification and detection. However, the theory developed for the planar metal-semiconductor contact is not compatible with the 1D Schottky barrier within the CNT, thus the optimized structure for a CNT detector is unknown. Our understanding can be improved by using the capacitance-coupled electrostatic doping from a gate of a CNT transistor, which will find out the role of the CNT energy level. A standard back gate CNT transistor based photodetector was fabricated, which showed that positive gate voltages could improve the performance by widening the Schottky barriers. However, the back gate geometry will modulate two Schottky barriers simultaneously with applied bias, severely degrading the detector performance. In order to optimize gate structure for the CNT IR detector, we propose a detector integrated with three different gate structures: side gates for source and drain, and middle gates for the bulk of CNT. The side gates next to the source and drain control the carrier injection at the junctions independently, while the middle gates can block the fringing field from the other gates, and modulate the Fermi level of the CNT channel. We found that opposite gate voltages at source and drain terminals can optimize the performance of the detector by widening one barrier, but eliminating the other. The optimized structure can lead to a high performance nano-scale photon harvest device. This will pave the way for the CNT as a significant building block for future nano-optoelectronics.",
keywords = "Carbon nanotube (CNT), Field effect transistor (FET), Gate structure, Infrared (IR) detector",
author = "Hongzhi Chen and Ning Xi and Lai, {King W.C.} and Fung, {Carmen Kar Man} and Ruiguo Yang",
year = "2010",
month = "11",
day = "29",
doi = "10.1109/NEMS.2010.5592213",
language = "English (US)",
isbn = "9781424465439",
series = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",
pages = "289--292",
booktitle = "2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010",

}

TY - GEN

T1 - Gate structure optimization of carbon nanotube transistor based infrared detector

AU - Chen, Hongzhi

AU - Xi, Ning

AU - Lai, King W.C.

AU - Fung, Carmen Kar Man

AU - Yang, Ruiguo

PY - 2010/11/29

Y1 - 2010/11/29

N2 - Single wall carbon nanotube (SWCNT) is a promising one dimensional (1D) material to fabricate high performance infrared (IR) detectors owing to its unique electrical and physical properties. The 1D Schottky barrier between metal and CNT can separate the photon-generated electron-hole pairs so as to produce photocurrent for quantification and detection. However, the theory developed for the planar metal-semiconductor contact is not compatible with the 1D Schottky barrier within the CNT, thus the optimized structure for a CNT detector is unknown. Our understanding can be improved by using the capacitance-coupled electrostatic doping from a gate of a CNT transistor, which will find out the role of the CNT energy level. A standard back gate CNT transistor based photodetector was fabricated, which showed that positive gate voltages could improve the performance by widening the Schottky barriers. However, the back gate geometry will modulate two Schottky barriers simultaneously with applied bias, severely degrading the detector performance. In order to optimize gate structure for the CNT IR detector, we propose a detector integrated with three different gate structures: side gates for source and drain, and middle gates for the bulk of CNT. The side gates next to the source and drain control the carrier injection at the junctions independently, while the middle gates can block the fringing field from the other gates, and modulate the Fermi level of the CNT channel. We found that opposite gate voltages at source and drain terminals can optimize the performance of the detector by widening one barrier, but eliminating the other. The optimized structure can lead to a high performance nano-scale photon harvest device. This will pave the way for the CNT as a significant building block for future nano-optoelectronics.

AB - Single wall carbon nanotube (SWCNT) is a promising one dimensional (1D) material to fabricate high performance infrared (IR) detectors owing to its unique electrical and physical properties. The 1D Schottky barrier between metal and CNT can separate the photon-generated electron-hole pairs so as to produce photocurrent for quantification and detection. However, the theory developed for the planar metal-semiconductor contact is not compatible with the 1D Schottky barrier within the CNT, thus the optimized structure for a CNT detector is unknown. Our understanding can be improved by using the capacitance-coupled electrostatic doping from a gate of a CNT transistor, which will find out the role of the CNT energy level. A standard back gate CNT transistor based photodetector was fabricated, which showed that positive gate voltages could improve the performance by widening the Schottky barriers. However, the back gate geometry will modulate two Schottky barriers simultaneously with applied bias, severely degrading the detector performance. In order to optimize gate structure for the CNT IR detector, we propose a detector integrated with three different gate structures: side gates for source and drain, and middle gates for the bulk of CNT. The side gates next to the source and drain control the carrier injection at the junctions independently, while the middle gates can block the fringing field from the other gates, and modulate the Fermi level of the CNT channel. We found that opposite gate voltages at source and drain terminals can optimize the performance of the detector by widening one barrier, but eliminating the other. The optimized structure can lead to a high performance nano-scale photon harvest device. This will pave the way for the CNT as a significant building block for future nano-optoelectronics.

KW - Carbon nanotube (CNT)

KW - Field effect transistor (FET)

KW - Gate structure

KW - Infrared (IR) detector

UR - http://www.scopus.com/inward/record.url?scp=78649235981&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78649235981&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2010.5592213

DO - 10.1109/NEMS.2010.5592213

M3 - Conference contribution

AN - SCOPUS:78649235981

SN - 9781424465439

T3 - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

SP - 289

EP - 292

BT - 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

ER -