Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors

Michael Randle, Alexey Lipatov, Avinash Kumar, Chun Pui Kwan, Jubin Nathawat, Bilal Barut, Shenchu Yin, Keke He, Nargess Arabchigavkani, Ripudaman Dixit, Takeshi Komesu, José Avila, Maria C. Asensio, Peter A. Dowben, Alexander Sinitskii, Uttam Singisetti, Jonathan P. Bird

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We explore the electrical characteristics of TiS 3 nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition (MIT) in their transfer curves. Their roomerature mobility is ∼20-30 cm 2 /(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (<â220 K), the transfer curves exhibit unusual mesoscopic fluctuations and a current suppression near zero bias that is common to charge-density wave (CDW) systems. The fluctuations have a nonmonotonic temperature dependence and wash out at a temperature close to that of the bulk MIT, suggesting they may be a feature of quantum interference in the CDW state. Overall, our results demonstrate that quasi-1D TiS 3 nanostructures represent a viable candidate for FET realization and that their functionality is influenced by complex phenomena.

Original languageEnglish (US)
Pages (from-to)803-811
Number of pages9
JournalACS Nano
Volume13
Issue number1
DOIs
StatePublished - Jan 22 2019

Fingerprint

Metal insulator transition
Field effect transistors
Nanowires
Charge density waves
nanowires
field effect transistors
insulators
curves
metals
Phonon scattering
retarding
interference
Nanostructured materials
Temperature
temperature dependence
crystal structure
temperature
Nanostructures
Crystal structure
scattering

Keywords

  • charge-density wave
  • metalâinsulator transition,
  • one-dimensional nanostructures
  • titanium trisulfide
  • transition-metal trichalcogenides

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Randle, M., Lipatov, A., Kumar, A., Kwan, C. P., Nathawat, J., Barut, B., ... Bird, J. P. (2019). Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors ACS Nano, 13(1), 803-811. https://doi.org/10.1021/acsnano.8b08260

Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors . / Randle, Michael; Lipatov, Alexey; Kumar, Avinash; Kwan, Chun Pui; Nathawat, Jubin; Barut, Bilal; Yin, Shenchu; He, Keke; Arabchigavkani, Nargess; Dixit, Ripudaman; Komesu, Takeshi; Avila, José; Asensio, Maria C.; Dowben, Peter A.; Sinitskii, Alexander; Singisetti, Uttam; Bird, Jonathan P.

In: ACS Nano, Vol. 13, No. 1, 22.01.2019, p. 803-811.

Research output: Contribution to journalArticle

Randle, M, Lipatov, A, Kumar, A, Kwan, CP, Nathawat, J, Barut, B, Yin, S, He, K, Arabchigavkani, N, Dixit, R, Komesu, T, Avila, J, Asensio, MC, Dowben, PA, Sinitskii, A, Singisetti, U & Bird, JP 2019, ' Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors ', ACS Nano, vol. 13, no. 1, pp. 803-811. https://doi.org/10.1021/acsnano.8b08260
Randle M, Lipatov A, Kumar A, Kwan CP, Nathawat J, Barut B et al. Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors ACS Nano. 2019 Jan 22;13(1):803-811. https://doi.org/10.1021/acsnano.8b08260
Randle, Michael ; Lipatov, Alexey ; Kumar, Avinash ; Kwan, Chun Pui ; Nathawat, Jubin ; Barut, Bilal ; Yin, Shenchu ; He, Keke ; Arabchigavkani, Nargess ; Dixit, Ripudaman ; Komesu, Takeshi ; Avila, José ; Asensio, Maria C. ; Dowben, Peter A. ; Sinitskii, Alexander ; Singisetti, Uttam ; Bird, Jonathan P. / Gate-Controlled Metal-Insulator Transition in TiS 3 Nanowire Field-Effect Transistors In: ACS Nano. 2019 ; Vol. 13, No. 1. pp. 803-811.
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