Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry

A. Boosalis, T. Hofmann, J. Šik, Mathias Schubert

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We present an optical, non-destructive, non-contact method of determining the silicon homojunction epilayer free-charge carrier concentration profile and thickness by means of combined terahertz (0.2-1 THz) and mid-infrared (10-50 THz) spectroscopic ellipsometry investigation. A dual homojunction iso- and aniso-type silicon sample is investigated. Application of analytical models for iso-type and aniso-type homojunctions results in an excellent match between calculated and experimental data. Best-match model calculated parameters are found to be consistent with electrical spreading resistance epilayer thickness and resistivity values.

Original languageEnglish (US)
Pages (from-to)2604-2607
Number of pages4
JournalThin Solid Films
Volume519
Issue number9
DOIs
StatePublished - Feb 28 2011

Fingerprint

homojunctions
Epilayers
Ellipsometry
Silicon
Charge carriers
ellipsometry
charge carriers
Infrared radiation
Acoustic impedance
Spectroscopic ellipsometry
profiles
Carrier concentration
Analytical models
silicon
electrical resistivity

Keywords

  • Homojunction
  • Isotype
  • Silicon
  • Spectroscopic ellipsometry
  • Terahertz

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Free-charge carrier profile of iso- and aniso-type Si homojunctions determined by terahertz and mid-infrared ellipsometry. / Boosalis, A.; Hofmann, T.; Šik, J.; Schubert, Mathias.

In: Thin Solid Films, Vol. 519, No. 9, 28.02.2011, p. 2604-2607.

Research output: Contribution to journalArticle

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